Product Information

71256SA25YG8

71256SA25YG8 electronic component of Renesas

Datasheet
SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 2.3474 ea
Line Total: USD 2347.4

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
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0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1000
Multiples : 1000

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71256SA25YG8
Renesas

1000 : USD 2.3474

     
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CMOS Static RAM 71256SA 256K (32K x 8-Bit) Features Description 32K x 8 advanced high-speed CMOS static RAM The IDT71256SA is a 262,144-bit high-speed Static RAM organized Commercial (0 to 70C) and Industrial (-40 to 85C) as 32K x 8. It is fabricated using high-performance, high-reliability CMOS temperature options technology. This state-of-the-art technology, combined with innovative Equal access and cycle times circuit design techniques, provides a cost-effective solution for high-speed Commercial: 12ns memory .needs. Commercial and Industrial: 15/20/25ns The IDT71256SA has an output enable pin which operates as fast as One Chip Select plus one Output Enable pin 6ns, with address access times as fast as 12ns. All bidirectional inputs and Bidirectional data inputs and outputs directly outputs of the IDT71256SA are TTL-compatible and operation is from a TTL-compatible single 5V supply. Fully static asynchronous circuitry is used, requiring no Low power consumption via chip deselect clocks or refresh for operation. Commercial product available in 28-pin 300-mil Plastic DIP, The IDT71256SA is packaged in 28-pin 300-mil Plastic DIP, 28-pin 300 mil Plastic SOJ and TSOP packages 300 mil Plastic SOJ and TSOP. Industrial product available in 28-pin 300 mil Plastic SOJ and TSOP packages Industrial temperature range (40C to +85C) is available for selected speeds Green parts available, see ordering information Functional Block Diagram A0 A1 A2 A3 A4 A5 A6 262,144-BIT ADDRESS A7 MEMORY A8 ARRAY DECODER A9 A10 A11 , A12 A13 A14 8 8 I/O0- I/O7 I/O CONTROL 2948 drw 01 CS CONTROL WE LOGIC OE 1 Jun.29.2071256SA CMOS Static RAM 256K (32K x 8-Bit) Commercial and Industrial Temperature Ranges (1) (1) Absolute Maximum Ratings Pin Configurations Symbol Rating Value Unit 1 VCC 28 A14 VCC Supply Voltage -0.5 to +7.0 V A12 2 27 WE Relative to GND 3 A7 26 A13 VTERM A8 Terminal Voltage -0.5 to VCC+0.5 V A6 4 25 Relative to GND A5 5 24 A9 71256SA A11 A4 6 23 o TBIAS Temperature Under Bias -55 to +125 C PJG28 OE A3 7 22 PTG28 A10 o A2 8 21 TSTG Storage Temperature -55 to +125 C CS 9 20 A1 PT Power Dissipation 1.0 W A0 10 19 I/O7 I/O6 11 18 I/O0 IOUT DC Output Current 50 mA 12 I/O5 I/O1 17 I/O4 13 I/O2 16 2948 tbl 02 NOTE: 14 I/O3 GND 15 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and 2948 drw 02 functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure DIP/SOJ to absolute maximum rating conditions for extended periods may affect reliability. Top View 22 21 OE A10 23 20 CS A11 (1,2) 24 19 A9 I/O7 Truth Table 25 18 A8 I/O6 26 17 A13 I/O5 Function CS OE WE I/O 27 WE 16 I/O4 71256SA 28 15 VCC I/O3 PZG28 LL H DATAOUT Read Data 1 14 A14 GND 2 13 A12 I/O2 , 3 LX L DATAIN Write Data A7 12 I/O1 4 11 A6 I/O0 5 10 A5 A0 L H H High-Z Outputs Disabled 6 9 A4 A1 7 8 A3 A2 H X X High-Z Deselected - Standby (ISB) 2948 drw 02a (3) VHC X X High-Z Deselected - Standby (ISB1) 2948 tbl 03 NOTES: TSOP 1. H = VIH, L = VIL, x = Don t care. Top View 2. VLC = 0.2V, VHC = VCC 0.2V. 3. Other inputs VHC or VLC. NOTE: 1. This text does not indicate orientation of actual part-marking. Recommended DC Operating Conditions Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 4.5 5.0 5.5 V Recommended Operating Temperature and Supply Voltage GND Ground 0 0 0 V Grade Temperature GND Vcc VIH Input High Voltage 2.2 VCC +0.5 V O O (1) Commercial 0 C to +70 C 0V 4.5V 5.5V VIL Input Low Voltage -0.5 0.8 V O O Industrial -40 C to +85 C 0V 4.5V 5.5V 2948 tbl 04 NOTE: 2948 tbl 01 1. VIL (min.) = 1.5V for pulse width less than 10ns, once per cycle. 2 Jun.29.20

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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