Product Information

F1192NLGI

F1192NLGI electronic component of Renesas

Datasheet
Up-Down Converters Dual RF Down Converting Mixer

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.3862 ea
Line Total: USD 12.39

363 - Global Stock
Ships to you between
Fri. 26 Apr to Thu. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
363 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

F1192NLGI
Renesas

1 : USD 12.3862
10 : USD 10.7666
25 : USD 10.5
50 : USD 9.5256
100 : USD 9.4512
250 : USD 9.3768

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
RF Frequency
NF - Noise Figure
LO Frequency
IF Frequency
Product
Series
Brand
Gain
Maximum Operating Frequency
Oip3 - Third Order Intercept
Operating Supply Current
Operating Supply Voltage
P1db - Compression Point
Pd - Power Dissipation
Factory Pack Quantity :
Tradename
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IDTF1192NLGI Datasheet RF Dual Wideband Gain-Settable Downconverting Mixer 400MHz to 3800MHz FEATURES GENERAL DESCRIPTION RF range: 400MHz to 3800MHz This document describes the specifications for the LO range: 400MHz to 3600MHz IDTF1192 Dual Wideband, Gain-Settable, Zero- IF Range: 50MHz to 600MHz TM TM Distortion Flat-Noise , RF to IF Downconverting Mixer. Dual Path for MIMO The F1192 offers very low power consumption with 4 Gain Settings 11dB, 8dB, 5dB, 2dB excellent linearity. In addition to this and the four 2 bit gain step control dynamically adjustable gain settings, the F1192 Ideal for Multi-Carrier Systems performance is exceptional across an extremely broad +35dBm OIP3 range of RF and IF frequencies. All of this makes it Low Noise Figure at any gain setting via IDTs TM ideal for myriad applications including: FlatNoise technology Z = 200 IF balanced, 50 RF, 50 LO 2G/3G/4G/5G/Multimode Remote Radio Units single ended High order MIMO systems, cells, picocells, DAS All internally matched. Single BOM for all RF, LO and IF frequencies Point to Point Wave Backhaul systems 4 mm x 4 mm, 24-pin TQFN package Broadband Repeaters Independent Path Standby mode Public Safety Infrastructure 75 nsec settling for gain adjustment VCC = 3.3V, 835 mW, 620 mW (low power Any radio system operating between 400 MHz and mode) 4000 MHz COMPETITIVE ADVANTAGE FUNCTIONAL BLOCK DIAGRAM F1192 offers maximum performance and flexibility at minimum power consumption. The unique and patented settable-gain feature allows it to be used in a very wide variety of radiocard applications, even allowing for dynamic adjustment of gain to maximize performance on the fly. The extremely wide RF and IF bandwidths are achieved with a fixed BOM with all internal matching. The device can function with as little as -6 dBm LO TM TMTM TM FlatNoise ZerZero-Dio-Dissttororttioionn FlatNoise power and with independent channel shutdown modes for ease of integration into high order TDD MIMO systems. BAND PERFORMANCE SUMMARY ORDERING INFORMATION RF Frequency (MHz) 900 1900 2600 3500 Gain (max G setting) 11.0 10.8 10.3 9.0 11 Gain (min G setting) 2.5 2.3 1.8 0.5 Omit IDT 2 Tape & 0.9 mm height NF max gain (dB) 8.9 8.7 10.0 10.9 prefix Reel package IIP3 min gain (dBm) 28 27 29 30 OIP3 G (dBm) 37 34 35 35 8 IP1dB min gain (dBm) 13.6 14.7 14.6 15.8 2x2 min gain (dBc) -75 -82 -73 -68 IDTF1192NLGI8 Channel Isolation (dB) 48 47 48 45 Pdiss (mW) 792 835 875 935 Green RF product Line Industrial Temp range IDTF1192, Rev O 02/22/2016 1 F1192 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units VCC to GND V -0.5 +3.6 V CC STBY A, STBY B, Gain Select1, Gain Select2, RF A, RF B, LO1 ADJ, V -0.5 Vcc + 0.5 V CTRL LO2 ADJ IF 2.4 Vcc + 0.5 V IF A+, IF A-, IF B+, IF B- OUT LO IN LO -0.5 +0.5 V IN IF 50 ohms IF BiasA, IF BiasB BIAS IF Ref Bias IF 500 ohms REF RF +20 dBm RF Input Power (RF A, RF B) continuous MAX LO Input Power (LO IN) continuous LO +20 dBm MAX Continuous Power Dissipation P 1.5 W DISS Junction Temperature T 150 C j Storage Temperature Range T -65 150 C ST Lead Temperature (soldering, 10s) T 260 C LEAD ElectroStatic Discharge HBM Class 2 (JEDEC/ESDA JS-001-2012) (2500 V) ElectroStatic Discharge CDM Class C3 (JEDEC 22-C101F) (1000 V) Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 45 C/W JA (Junction Case) The Case is defined as the exposed paddle 2.1 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 RF Dual Wideband Gain-Settable Downconverting Mixer 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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