Product Information

F2250NLGK

F2250NLGK electronic component of Renesas

Datasheet
Attenuators Wideband Variable RF 1.4dB 2K MHz 33.6dB

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.6895 ea
Line Total: USD 6.6895

1584 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1345 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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F2250NLGK
Renesas

1 : USD 6.6895
10 : USD 6.1582
25 : USD 5.8684
100 : USD 5.2285
250 : USD 4.999
500 : USD 4.6126
1000 : USD 4.2021
2496 : USD 4.2021
5616 : USD 4.0693

     
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RoHS - XON
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Maximum Attenuation
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Insertion Loss
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F2250NLGK Datasheet Voltage Variable RF Attenuator 50MHz to 6000MHz GENERAL DESCRIPTION FEATURES The F2250 is a low insertion loss Voltage Variable RF Low Insertion Loss: 1.4dB 2000MHz Attenuator (VVA) designed for a multitude of wireless Typical / Min IIP3: 65dBm / 47dBm and other RF applications. This device covers a broad Typical / Min IIP2: 95dBm / 87dBm frequency range from 50MHz to 6000MHz. In addition 33.6dB Attenuation Range to providing low insertion loss, the F2250 provides Bi-directional RF ports excellent linearity performance over its entire voltage +34.4dBm Input P1dB compression control and attenuation range. V pin allows either positive or negative MODE attenuation control response The F2250 uses a single positive supply voltage of Linear-in-dB attenuation characteristic 3.15V to 5.25V. Other features include the VMODE pin Supply voltage: 3.15V to 5.25V allowing either positive or negative voltage control VCTRL range: 0V to 3.6V using 5V supply slope vs attenuation and multi-directional operation +105C max operating temperature meaning the RF input can be applied to either RF1 or 3mm x 3mm, 16-pin QFN package RF2 pins. Control voltage ranges from 0V to 3.6V using either positive or negative control voltage slope. DEVICE BLOCK DIAGRAM COMPETITIVE ADVANTAGE F2250 provides extremely low insertion loss and superb IP3, IP2, Return Loss and Slope Linearity across the control range. Comparing to the previous state-of-the- art for silicon VVAs this device is better as follows: Control Insertion Loss 2000MHz: 1.4dB vs. 2.8dB Insertion Loss 6000MHz: 2.7dB vs. 7dB RF2 RF1 Maximum Attenuation Slope: 33dB/Volt vs. 53dB/Volt Minimum Return Loss up to 6000MHz: 12.5dB vs. 7dB Minimum Output IP3: 31dBm vs. 15dBm ORDERING INFORMATION Minimum Input IP2: 87dBm vs. 80dBm Tape & Maximum Operating Temperature: +105C vs. +85C 0.9 mm height Reel package APPLICATIONS F2250NLGK8 Base Station 2G, 3G, 4G Portable Wireless Green RF Product Line Repeaters and E911 systems Temp Range Digital Pre-Distortion Point to Point Infrastructure PART MATRIX Public Safety Infrastructure Part RF Freq Insertion Loss (dB) IIP3 Pinout WIMAX Receivers and Transmitters Range (MHz) Compatibility (dBm) Military Systems, JTRS radios F2250 50 - 6000 1.4 (at 2GHz) +65 RFMD RFID handheld and portable readers F2255 1 - 3000 1.1 (at 500MHz) +60 Cable Infrastructure Wireless LAN F2258 50 - 6000 1.4 (at 2GHz) +65 Hittite Test / ATE Equipment Voltage Variable RF Attenuator 1 REV 4, January 2017 V MODE V DD V CTRLF2250NLGK Datasheet Voltage Variable RF Attenuator 50MHz to 6000MHz ABSOLUTE MAXIMUM RATINGS Parameter / Condition Symbol Min Max Units V to GND V -0.3 5.5 V DD DD VMODE to GND VMODE -0.3 Minimum ( VDD, 3.9 ) V VCTRL to GND VDD = 0V to 5.25V VCTRL -0.3 Minimum ( VDD, 4.0 ) V RF1, RF2 to GND V -0.3 0.3 V RF RF1 or RF2 Input Power applied for 24 hours maximum PMAX24 30 dBm (VDD applied 2GHz and +85C) RF1 or RF2 Continuous Operating Power PMAX OP See Figure 1 dBm Maximum Junction Temperature T +150 C JMAX Storage Temperature Range TST -65 +150 C Lead Temperature (soldering, 10s) TLEAD +260 C ESD Voltage HBM (Per ESD STM5.1-2007) V Class 1C ESDHBM ESD Voltage CDM (Per ESD STM5.3.1-2009) VESDCDM Class C3 FIGURE 1: MAXIMUM RF INPUT POWER VS. RF FREQUENCY Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS JA (Junction Ambient) 80.6C/W JC (Junction Case) The Case is defined as the exposed paddle 5.1C/W Moisture Sensitivity Rating (Per J-STD-020) MSL 1 Voltage Variable RF Attenuator 2 REV 4, January 2017

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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