Product Information

F2258NLGK8

F2258NLGK8 electronic component of Renesas

Datasheet
Attenuators RF Attenuator 1.4dB 50 to 6000 MHz

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.0156 ea
Line Total: USD 7.02

3004 - Global Stock
Ships to you between
Wed. 08 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3004 - Global Stock


Ships to you between Wed. 08 May to Fri. 10 May

MOQ : 1
Multiples : 1

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F2258NLGK8
Renesas

1 : USD 7.0156
10 : USD 6.4118
25 : USD 5.796
100 : USD 5.4579
250 : USD 5.313
500 : USD 4.8904
1000 : USD 4.347
2500 : USD 4.2625
5000 : USD 4.2625

     
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IDTF2258NLGK Datasheet Voltage Variable RF Attenuator 50 to 6000 MHz FEATURES GENERAL DESCRIPTION Low Insertion Loss: 1.4 dB 2000 MHz The F2258 is a low insertion loss Voltage Variable RF Typical / Min IIP3: 65 dBm / 47 dBm Attenuator (VVA) designed for a multitude of wireless Typical / Min IIP2: 95 dBm / 87 dBm and other RF applications. This device covers a broad 33.6 dB Attenuation Range frequency range from 50 MHz to 6000 MHz. In Bi-directional RF ports addition to providing low insertion loss, the F2258 +34.4 dBm Input P1dB compression provides excellent linearity performance over its entire Linear-in-dB attenuation characteristic voltage control and attenuation range. Supply voltage: 3.15 V to 5.25 V The F2258 uses a single positive supply voltage of VCTRL range: 0 V to 3.6 V using 5 V supply 3.15 V to 5.25 V. Another feature includes multi- +105 C max operating temperature directional operation meaning the RF input can be 3 mm x 3 mm, 16-pin QFN package applied to either RF1 or RF2 pins. Control voltage ranges from 0 V to 3.6 V. FUNCTIONAL BLOCK DIAGRAM COMPETITIVE ADVANTAGE F2258 provides extremely low insertion loss and superb IP3, IP2, Return Loss and Slope Linearity across the control range. Comparing to the previous RF state-of-the-art for silicon VVAs this device is better as 1 RF 2 follows: Insertion Loss: 2000 MHz: 1.4 dB vs. 2.8 dB Control 6000 MHz: 2.7 dB vs. 7.0 dB Maximum Attenuation Slope: 33 dB/Volt vs. 53 dB/Volt Minimum Return Loss up to 6000 MHz: V V DD CTRL 12.5 dB vs. 7 dB Minimum Output IP3: ORDERING INFORMATION 31 dBm vs. 15 dBm Minimum Input IP2: Omit IDT Tape & 0.9 mm height prefix Reel 87 dBm vs. 80 dBm package Maximum Operating Temperature: +105 C vs. +85 C IDTF2258NLGK8 APPLICATIONS Green RF Product Line Base Station 2G, 3G, 4G, Portable Wireless Repeaters and E911 systems Digital Pre-Distortion Point to Point Infrastructure Public Safety Infrastructure Satellite Receivers and Modems WIMAX Receivers and Transmitters Military Systems, JTRS radios RFID handheld and portable readers Cable Infrastructure Wireless LAN Test / ATE Equipment F2258, Rev 1 01/20/2017 1 F2258 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units V to GND V -0.3 +5.5 V DD DD Minimum VCTRL to GND (with 0 V VDD 5.25 V) VCTRL -0.3 V (VDD, +4.0) RF1, RF2 to GND V -0.3 0.3 V RF RF1 or RF2 Input Power applied for 24 hours maximum (V applied 2000 MHz DD P 30 dBm MAX24 and T =+85C) case Junction Temperature T 150 C j Storage Temperature Range Tst -65 150 C Lead Temperature (soldering, 10s) 260 C ElectroStatic Discharge HBM VESDHBM (Class 1C) (JEDEC/ESDA JS-001-2012) ElectroStatic Discharge CDM V (Class C3) ESDCDM (JEDEC 22-C101F) Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS JA (Junction Ambient) 80.6 C/W (Junction Case) The Case is defined as the exposed paddle 5.1 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 Voltage Variable RF Attenuator 2 Rev 1 01/20/2017

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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