F2258NLGK8 Renesas

F2258NLGK8 electronic component of Renesas
F2258NLGK8 Renesas
F2258NLGK8 Attenuators
F2258NLGK8  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of F2258NLGK8 Attenuators across the USA, India, Europe, Australia, and various other global locations. F2258NLGK8 Attenuators are a product manufactured by Renesas. We provide cost-effective solutions for Attenuators, ensuring timely deliveries around the world.

Part No. F2258NLGK8
Manufacturer: Renesas
Category: Attenuators
Description: Attenuators RF Attenuator 1.4dB 50 to 6000 MHz
Datasheet: F2258NLGK8 Datasheet (PDF)
Price (USD)
1: USD 7.6781 ea
Line Total: USD 7.68 
Availability : 0
  
QtyUnit Price
1$ 7.6781
10$ 5.544
25$ 5.2437
100$ 4.8972
250$ 4.7355
500$ 4.493
1000$ 4.158
2500$ 4.0772

Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.8852
10$ 6.1916
25$ 5.7273
50$ 5.5982
100$ 5.2589
250$ 5.1184


Availability 0
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.6781
10$ 5.544
25$ 5.2437
100$ 4.8972
250$ 4.7355
500$ 4.493
1000$ 4.158
2500$ 4.0772

   
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We are delighted to provide the F2258NLGK8 from our Attenuators category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the F2258NLGK8 and other electronic components in the Attenuators category and beyond.

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IDTF2258NLGK Datasheet Voltage Variable RF Attenuator 50 to 6000 MHz FEATURES GENERAL DESCRIPTION Low Insertion Loss: 1.4 dB 2000 MHz The F2258 is a low insertion loss Voltage Variable RF Typical / Min IIP3: 65 dBm / 47 dBm Attenuator (VVA) designed for a multitude of wireless Typical / Min IIP2: 95 dBm / 87 dBm and other RF applications. This device covers a broad 33.6 dB Attenuation Range frequency range from 50 MHz to 6000 MHz. In Bi-directional RF ports addition to providing low insertion loss, the F2258 +34.4 dBm Input P1dB compression provides excellent linearity performance over its entire Linear-in-dB attenuation characteristic voltage control and attenuation range. Supply voltage: 3.15 V to 5.25 V The F2258 uses a single positive supply voltage of VCTRL range: 0 V to 3.6 V using 5 V supply 3.15 V to 5.25 V. Another feature includes multi- +105 C max operating temperature directional operation meaning the RF input can be 3 mm x 3 mm, 16-pin QFN package applied to either RF1 or RF2 pins. Control voltage ranges from 0 V to 3.6 V. FUNCTIONAL BLOCK DIAGRAM COMPETITIVE ADVANTAGE F2258 provides extremely low insertion loss and superb IP3, IP2, Return Loss and Slope Linearity across the control range. Comparing to the previous RF state-of-the-art for silicon VVAs this device is better as 1 RF 2 follows: Insertion Loss: 2000 MHz: 1.4 dB vs. 2.8 dB Control 6000 MHz: 2.7 dB vs. 7.0 dB Maximum Attenuation Slope: 33 dB/Volt vs. 53 dB/Volt Minimum Return Loss up to 6000 MHz: V V DD CTRL 12.5 dB vs. 7 dB Minimum Output IP3: ORDERING INFORMATION 31 dBm vs. 15 dBm Minimum Input IP2: Omit IDT Tape & 0.9 mm height prefix Reel 87 dBm vs. 80 dBm package Maximum Operating Temperature: +105 C vs. +85 C IDTF2258NLGK8 APPLICATIONS Green RF Product Line Base Station 2G, 3G, 4G, Portable Wireless Repeaters and E911 systems Digital Pre-Distortion Point to Point Infrastructure Public Safety Infrastructure Satellite Receivers and Modems WIMAX Receivers and Transmitters Military Systems, JTRS radios RFID handheld and portable readers Cable Infrastructure Wireless LAN Test / ATE Equipment F2258, Rev 1 01/20/2017 1 F2258 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units V to GND V -0.3 +5.5 V DD DD Minimum VCTRL to GND (with 0 V VDD 5.25 V) VCTRL -0.3 V (VDD, +4.0) RF1, RF2 to GND V -0.3 0.3 V RF RF1 or RF2 Input Power applied for 24 hours maximum (V applied 2000 MHz DD P 30 dBm MAX24 and T =+85C) case Junction Temperature T 150 C j Storage Temperature Range Tst -65 150 C Lead Temperature (soldering, 10s) 260 C ElectroStatic Discharge HBM VESDHBM (Class 1C) (JEDEC/ESDA JS-001-2012) ElectroStatic Discharge CDM V (Class C3) ESDCDM (JEDEC 22-C101F) Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS JA (Junction Ambient) 80.6 C/W (Junction Case) The Case is defined as the exposed paddle 5.1 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 Voltage Variable RF Attenuator 2 Rev 1 01/20/2017

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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