F2912 Datasheet High Reliability SP2T RF Switch 9 kHz to 9000 MHz GENERAL DESCRIPTION FEATURES The F2912 is a high reliability, low insertion loss, 50 Very low insertion loss: 0.4 dB 1GHz SP2T absorptive RF switch designed for a multitude of High Input IP3: +66 dBm wireless and other RF applications. This device covers RF1 to RF2 Isolation: 74 dB 1GHz a broad frequency range from 9 kHz to 9000 MHz. In 1-pin or 2-pin device control option addition to providing low insertion loss, the F2912 also Low DC current 20 A using 3.3 V logic delivers excellent linearity and isolation performance Single positive supply voltage: 3.3 V while providing a 50 termination to the unused RF 3.3 V or 1.8 V user-selectable control logic input port. Operating temperature -55 C to +125 C 4 mm x 4 mm 20 pin TQFN package The F2912 uses a single positive supply voltage of 3.3 V supporting three states using either 3.3 V or FUNCTIONAL BLOCK DIAGRAM 1.8 V user-selectable control voltage. An added Mode Logic CTL feature includes a Mode CTL pin allowing the user to CTL CTL Pins control the device with either 1-pin or 2-pin control. COMPETITIVE ADVANTAGE The F2912 provides extremely low insertion loss particularly important for RF receiver front-end use. 50 50 Insertion Loss : 0.4 dB 1 GHz IIP3: +66 dBm RF1 RF2 RF1 to RF2 Isolation: 74 dB 1 GHz Negative supply voltage not required 50 Extended temperature -55 C to +125 C APPLICATIONS Base Station 2G, 3G, 4G Portable Wireless RF COM Repeaters and E911 systems Digital Pre-Distortion Point to Point Infrastructure ORDERING INFORMATION Public Safety Infrastructure WIMAX Receivers and Transmitters Tape & Military Systems, JTRS radios Reel RFID handheld and portable readers Cable Infrastructure Wireless LAN F2912NCGI8 Test / ATE Equipment Green F2912, Rev 3, 04/01/2016 1 F2912 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units VCC to GND V -0.3 +3.9 V CC CTL1, CTL2, LogicCTL V -0.3 V + 0.3 V CNTL cc RF1, RF2, RF Com V -0.3 +0.3 V RF Maximum Junction Temperature T +140 C Jmax Storage Temperature Range T -65 +150 C ST Lead Temperature (soldering, 10s) T +260 C LEAD ElectroStatic Discharge HBM Class 2 V V ESDHBM (JEDEC/ESDA JS-001-2012) (2000) ElectroStatic Discharge CDM Class IV V V ESDCDM (JEDEC 22-C101F) (1500) RF Power For Case Temperatures up to +85 C* RF1, RF2 (RF1 or RF2 is connected to RF COM, State 3 and 2) +33 dBm RF1, RF2 (RF1 or RF2 is NOT connected to RF COM, State 1, 2 and 3) +24 dBm RF COM (RF COM port is NOT connected to RF1 or RF2, State 1) +24 dBm RF Power For Case Temperatures up to +105 C* RF1, RF2 (RF1 or RF2 is connected to RF COM, State 3 and 2) +33 dBm RF1, RF2 (RF1 or RF2 is NOT connected to RF COM, State 1, 2 and 3) +21 dBm RF COM (RF COM port is NOT connected to RF1 or RF2, State 1) +21 dBm RF Power For Case Temperatures up to +120 C* RF1, RF2 (RF1 or RF2 is connected to RF COM, State 3 and 2) +27 dBm RF1, RF2 (RF1 or RF2 is NOT connected to RF COM, State 1, 2 and 3) +18 dBm RF COM (RF COM port is NOT connected to RF1 or RF2, State 1) +18 dBm * Note: These Absolute Maximum RF power limits are reduced if the RF frequency is lower than 400 MHz. Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 60.0 C/W JA (Junction Case) The Case is defined as the exposed paddle 3.9 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL 1 High Reliability SP2T RF Switch 2 F2912, Rev 3, 04/01/2016