F2915 F2915 Datasheet Datasheet DESCRIPTION FEATURES The F2915 is a high reliability, low insertion loss, 50 Five symmetric, absorptive RF ports SP5T absorptive RF switch designed for a multitude of High Isolation: 50 dB 4000 MHz RF applications including wireless communications. Low Insertion Loss: 1.1 dB 4000 MHz This device covers a broad frequency range from High Linearity: 50 MHz to 8000 MHz. In addition to providing low o IIP2 of 114 dBm 2000 MHz insertion loss, the F2915 also delivers excellent o IIP3 of 60.5 dBm 4000 MHz linearity and isolation performance while providing a High Operating Power Handling: 50 termination to the unused RF input ports. The o 33 dBm CW on selected RF port F2915 also includes a patent pending constant o 27 dBm on terminated ports impedance (KZ) feature. KZ improves system hot Single 2.7 V to 5.5 V supply voltage switching ruggedness, minimizes LO pulling in VCOs, External Negative Supply Option and reduces phase and amplitude variations in 3.3 V and 1.8 V compatible control logic distribution networks. It is also ideal for dynamic Operating Temperature -40 C to +105 C switching/selection between two or more amplifiers 4 mm x 4 mm 24 pin QFN package while avoiding damage to upstream /downstream Pin compatible with competitors sensitive devices such as PAs and ADCs. The F2915 uses a single positive supply voltage FUNCTIONAL BLOCK DIAGRAM supporting three logic control pins using either 3.3 V or 1.8 V control logic. Connecting a negative voltage to RFC VSSEXT V3 pin 20 disables the internal negative voltage generator and becomes the negative supply. Control V2 COMPETITIVE ADVANTAGE K Z Circuit V1 The F2915 provides constant impedance in all RF ports RF5 during transitions improving a systems hot-switching ruggedness. The device also supports high power 50 handling, and high isolation particularly important for DPD receiver use. 50 50 Constant impedance K during switching transition K ZZ RF1 RF4 RFX to RFC Isolation = 50 dB* 50 50 Insertion Loss = 1.1 dB* IIP3: +60.5 dBm* Extended temperature: -40 C to +105 C RF3 RF2 * 4 GHz APPLICATIONS ORDERING INFORMATION Base Station 2G, 3G, 4G Tape & Portable Wireless Reel Repeaters and E911 systems Digital Pre-Distortion F2915NBGK8 Point to Point Infrastructure Green Public Safety Infrastructure Military Systems, JTRS radios Cable Infrastructure Test / ATE Equipment 2021 Renesas Electronics Corporation 1 October 26, 2021 F2915 Datasheet ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units VDD to GND VDD -0.3 +6.0 V Lower of V1, V2, V3 to GND V -0.3 V CNTL ( 3.6, V + 0.3) DD RF1, RF2, RF3, RF4, RF5, RFC to GND VRF -0.3 +0.3 V VSSEXT to GND VEXT -4.0 +0.3 V Input Power for any one selected RF through port. P 37 dBm MAXTHRU (V applied 2 GHz and T = +85 C) DD C Input Power for any one selected RF terminated PMAXTERM 30 dBm port .(VDD applied 2 GHz and TC = +85 C) Input Power for RFC when in the all off state. P 33 dBm MAXCOM (V applied 2 GHz and T = +85 C) DD C Continuous Power Dissipation (T = 95 C Max) 3 W C Maximum Junction Temperature TJmax +140 C Storage Temperature Range T -65 +150 C ST Lead Temperature (soldering, 10s) TLEAD +260 C ESD Voltage HBM (Per JESD22-A114) V Class 1C (1500V) ESDHBM ESD Voltage CDM (Per JESD22-C101) VESDCDM Class C3 (1000V) TC = Temperature of the exposed paddle Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS JA (Junction Ambient) 41 C/W (Junction Case) The Case is defined as the exposed paddle 6.4 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 2021 Renesas Electronics Corporation 2 October 26, 2021