Product Information

HIP2106AIRZ

HIP2106AIRZ electronic component of Renesas

Datasheet
Gate Drivers SYNCH RECT BUCK MOSFET - 3.3V PWM input, DFN 3x3 10ld

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5673 ea
Line Total: USD 1.57

36 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
32 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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HIP2106AIRZ
Renesas

1 : USD 0.9131
10 : USD 0.8119
100 : USD 0.6475
500 : USD 0.5509
1000 : USD 0.4428
2000 : USD 0.4186
5000 : USD 0.4186
10000 : USD 0.4106
25000 : USD 0.4025

     
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DATASHEET HIP2105, HIP2106A FN8999 Rev.1.00 Low Voltage Driver for Synchronous Rectification Jun 6, 2018 The HIP2105 and HIP2106A are high frequency Features MOSFET drivers optimized to drive two N-channel Adaptive shoot-through protection (HIP2106A only) power MOSFETs in a synchronous buck converter HI and LI inputs (HIP2105 only) topology. The HIP2105 has HI/LI inputs and the HIP2106A has a single PWM input. Both these drivers, 0.4 ON-resistance and 4A sink current capability combined with Renesas multi-phase buck PWM Low tri-state hold-off time (20ns) (HIP2106A only) controllers, form a complete single-stage core-voltage regulator solution with high-efficiency performance at Supports 3.3V and 5V HI/LI or PWM input high switching frequency for advanced microprocessors. Power-On Reset (POR) The HIP2105 and HIP2106A are biased by a single low Dual Flat No-Lead (DFN) package voltage supply (5V), minimizing driver switching losses Compliant to JEDEC PUB95 MO-220 QFN-Quad in high MOSFET gate capacitance and high switching Flat No Leads - product outline frequency applications. Each driver is capable of driving a 3nF load with less than 15ns rise/fall time. Near chip-scale package footprint improves PCB Bootstrapping of the upper gate driver is implemented efficiency and thinner in profile using an internal low forward voltage drop diode, Applications reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-channel Wireless chargers MOSFETs. Adaptive shoot-through protection on the High frequency low profile high efficiency DC/DC HIP2106A is integrated to prevent both MOSFETs from converters conducting simultaneously. High current low voltage DC/DC converters The HIP2105 and HIP2106A feature a 4A typical sink E-cigarette current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE Related Literature node rising edge, preventing power loss caused by the For a full list of related documents, visit our website self turn-on of the lower MOSFET due to the high dV/dt of the switching node. HIP2105 and HIP2106A product pages The HIP2106A also features an input that recognizes a high-impedance state, working together with Renesas multi-phase 3.3V or 5V PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be used in a power system to protect the load from negative output voltage damage. VCC BOOT VCC BOOT VCTRL UGATE UGATE PHASE Shoot- PHASE Shoot- Through 7k Through Protection VCC Protection Control H I PWM VCC Control Logic LGATE Logic 7k L I LGATE GND GND VCTRL = Controller VCC HIP2106A HIP2105 Figure 1. Block Diagrams FN8999 Rev.1.00 Page 1 of 17 Jun 6, 2018HIP2105, HIP2106A Contents 1. Overview . 3 1.1 Typical Applications 3 1.2 Ordering Information . 4 1.3 Pin Configurations . 5 1.4 Pin Descriptions . 5 2. Specifications . 6 2.1 Absolute Maximum Ratings 6 2.2 Thermal Information 6 2.3 Recommended Operating Conditions 6 2.4 Electrical Specifications . 7 2.5 Timing Test Setups 8 2.6 Timing Diagrams 9 3. Device Information 10 3.1 Operation and Adaptive Shoot-Through Protection (HIP2106A) . 10 3.2 HI/LI Inputs (HIP2105) . 10 3.3 Bootstrap Considerations 11 3.4 Power Dissipation 11 4. Application Information 13 4.1 MOSFET Selection . 13 4.2 Layout Considerations . 13 4.3 Upper MOSFET Self Turn-On Effects at Startup . 14 5. Revision History 15 6. Package Outline Drawing 16 FN8999 Rev.1.00 Page 2 of 17 Jun 6, 2018

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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