R1LV0108E Series 1Mb Advanced LPSRAM (128k word x 8bit) R10DS0271EJ0100 Rev.1.00 2017.1.27 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesass high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP. Features Single 2.7V~3.6V power supply Small stand-by current: 0.6A (3.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1 and CS2 Common Data I/O Three-state outputs: OR-tie Capability OE prevents data contention on the I/O bus Ordering Information Access Temperature Orderable part name Package Shipping container time range R1LV0108ESN-5SI B0 Tube (Magazine) 525-mil 32-pin plastic SOP R1LV0108ESN-5SI S0 Embossed tape R1LV0108ESA-5SI B1 Tray 8mm13.4mm 32-pin 55 ns -40 ~ +85C plastic sTSOP R1LV0108ESA-5SI S1 Embossed tape R1LV0108ESF-5SI B1 Tray 8mm20mm 32-pin plastic TSOP R1LV0108ESF-5SI S1 Embossed tape R10DS0271EJ0100 Rev.1.00 Page 1 of 11 2017.1.27 R1LV0108E Series Pin Arrangement NC 1 32 Vcc A16 2 31 A15 A14 3 30 CS2 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 32-pin SOP A3 9 24 OE A2 10 23 A10 A1 11 22 CS1 A0 12 21 DQ7 DQ0 13 20 DQ6 DQ1 14 19 DQ5 DQ2 15 18 DQ4 GND 16 17 DQ3 A11 1 32 OE A9 2 31 A10 A8 3 30 CS1 A13 4 29 DQ7 WE 5 28 DQ6 CS2 6 27 DQ5 A15 7 26 DQ4 Vcc 8 25 DQ3 32-pin sTSOP NC 9 24 GND A16 10 23 DQ2 A14 11 22 DQ1 A12 12 21 DQ0 A7 13 20 A0 A6 14 19 A1 A5 15 18 A2 A4 16 17 A3 A11 1 32 OE A9 2 31 A10 A8 3 30 CS1 A13 4 29 DQ7 WE 5 28 DQ6 CS2 6 27 DQ5 A15 7 26 DQ4 Vcc 8 25 DQ3 32-pin TSOP NC 9 24 GND A16 10 23 DQ2 A14 11 22 DQ1 A12 12 21 DQ0 A7 13 20 A0 A6 14 19 A1 A5 15 18 A2 A4 16 17 A3 R10DS0271EJ0100 Rev.1.00 Page 2 of 11 2017.1.27