RJK0305DPB
Silicon N Channel Power MOS FET
Power Switching
REJ03G1353-0900
Rev.9.00
Apr 19, 2006
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R = 6.7 m typ. (at V = 10 V)
DS(on) GS
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4 1, 2, 3 Source
G
4 Gate
4
5 Drain
3
2
1
SSS
1
23
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage V 30 V
DSS
Gate to source voltage V +16/-12 V
GSS
Drain current I 30 A
D
Note1
Drain peak current I 120 A
D(pulse)
Body-drain diode reverse drain current I 30 A
DR
Note 2
Avalanche current I 10 A
AP
Note 2
Avalanche energy E 10 mJ
AR
Note3
Channel dissipation Pch 45 W
Channel to Case Thermal Resistance ch-C 2.78 C/W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Rev.9.00 Apr 19, 2006 page 1 of 6
RJK0305DPB
Electrical Characteristics
(Ta = 25C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V 30 V I = 10 mA, V = 0
(BR)DSS D GS
Gate to source leak current I 0.1 A V = +16/12 V, V = 0
GSS GS DS
Zero gate voltage drain current I 1 A V = 30 V, V = 0
DSS DS GS
Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA
GS(off) DS D
Note4
Static drain to source on state R 6.7 8.0 m I = 15 A, V = 10 V
DS(on) D GS
Note4
resistance
R 10 13 m I = 15 A, V = 4.5 V
DS(on) D GS
Note4
Forward transfer admittance |y| 45 S I = 15 A, V = 10 V
fs D DS
Input capacitance Ciss 1250 pF V = 10 V, V = 0,
DS GS
f = 1 MHz
Output capacitance Coss 530 pF
Reverse transfer capacitance Crss 70 pF
Gate Resistance Rg 0.6
Total gate charge Qg 8 nC V = 10 V, V = 4.5 V,
DD GS
I = 30 A
D
Gate to source charge Qgs 3.6 nC
Gate to drain charge Qgd 1.5 nC
Turn-on delay time t 7.0 ns V = 10 V, I = 15 A,
d(on) GS D
V 10 V,R = 0.67 ,
Rise time t 3.0 ns DD L
r
Rg = 4.7
Turn-off delay time t 35 ns
d(off)
Fall time t 3.0 ns
f
Note4
Bodydrain diode forward voltage V 0.85 1.08 V IF = 30 A, V = 0
DF GS
Bodydrain diode reverse recovery t 30 ns IF = 30 A, V = 0
rr GS
time di / dt = 100 A/ s
F
Notes: 4. Pulse test
Rev.9.00 Apr 19, 2006 page 2 of 6