Preliminary Datasheet RJK0368DPA REJ03G1658-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 11 m typ. (at V = 10 V) DS(on) GS Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 56 7 8 D DD D 6 7 8 5 4 1, 2, 3 Source G 4 Gate 1 4 3 2 5, 6, 7, 8 Drain SS S 12 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 20 A D Note1 Drain peak current I 80 A D(pulse) Body-drain diode reverse drain current I 20 A DR Note 2 Avalanche current I 9 A AP Note 2 Avalanche energy E 8.1 mJ AR Note3 Channel dissipation Pch 25 W Note3 Channel to case thermal resistance ch-c 5 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C REJ03G1658-0410 Rev.4.10 Page 1 of 6 May 21, 2010 RJK0368DPA Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 11 14.3 m I = 10 A, V = 10 V DS(on) D GS Note4 resistance R 16 22.4 m I = 10 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 35 S I = 10 A, V = 10 V fs D DS Input capacitance Ciss 730 pF V = 10 V DS V = 0 GS Output capacitance Coss 140 pF f = 1 MHz Reverse transfer capacitance Crss 45 pF Gate Resistance Rg 1.2 Total gate charge Qg 6.2 nC V = 10 V DD V = 4.5 V GS Gate to source charge Qgs 1.9 nC I = 20 A D Gate to drain charge Qgd 1.3 nC Turn-on delay time t 5 ns V = 10 V, I = 10 A d(on) GS D V 10 V Rise time t 3.5 ns DD r R = 1 L Turn-off delay time t 31.4 ns d(off) Rg = 4.7 Fall time t 4.1 ns f Note4 Bodydrain diode forward voltage V 0.88 1.15 V I = 20 A, V = 0 DF F GS Bodydrain diode reverse recovery t 20 ns I =20 A, V = 0 rr F GS time di / dt = 100 A/ s F Notes: 4. Pulse test REJ03G1658-0410 Rev.4.10 Page 2 of 6 May 21, 2010