RJK0302DPB Silicon N Channel Power MOS FET Power Switching REJ03G1340-0600 Rev.6.00 Apr 19, 2006 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 2.6 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 1, 2, 3 Source G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V +16/-12 V GSS Drain current I 50 A D Note1 Drain peak current I 200 A D(pulse) Body-drain diode reverse drain current I 50 A DR Note 2 Avalanche current I 20 A AP Note 2 Avalanche energy E 40 mJ AR Note3 Channel dissipation Pch 60 W Channel to Case Thermal Resistance ch-C 2.09 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Rev.6.00 Apr 19, 2006 page 1 of 6 RJK0302DPB Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.1 A V = +16/12 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 2.6 3.1 m I = 25 A, V = 10 V DS(on) D GS Note4 resistance R 3.5 4.6 m I = 25 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 95 S I = 25 A, V = 10 V fs D DS Input capacitance Ciss 4200 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 1380 pF Reverse transfer capacitance Crss 210 pF Gate Resistance Rg 0.7 Total gate charge Qg 28 nC V = 10 V, V = 4.5 V, DD GS I = 50 A D Gate to source charge Qgs 12 nC Gate to drain charge Qgd 6.0 nC Turn-on delay time t 11 ns V = 10 V, I = 25 A, d(on) GS D V 10 V,R = 0.4 , Rise time t 4.0 ns DD L r Rg = 4.7 Turn-off delay time t 54 ns d(off) Fall time t 5.5 ns f Note4 Bodydrain diode forward voltage V 0.84 1.10 V IF = 50 A, V = 0 DF GS Bodydrain diode reverse recovery t 40 ns IF = 50 A, V = 0 rr GS time di / dt = 100 A/ s F Notes: 4. Pulse test Rev.6.00 Apr 19, 2006 page 2 of 6