Product Information

RQJ0203WGDQA#H6

Name: RQJ0203WGDQA#H6
Brand: Renesas
SKU: RQJ0203WGDQAH6_Renesas
Availability: OutOfStock
Rating: 5 (11 reviews)

RQJ0203WGDQA#H6 electronic component of Renesas

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Datasheet

MOSFET, P CH, 20V, 2.1A, SC-59A

Manufacturer: Renesas

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.3215 ea
Line Total: USD 1.61

0 - Global Stock

MOQ: 5 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 15 May to Tue. 21 May MOQ : 5 Multiples : 1 RQJ0203WGDQA#H6 Renesas	5 : USD 0.3706 10 : USD 0.2958 100 : USD 0.2279 500 : USD 0.1978 1000 : USD 0.1677 5000 : USD 0.153

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Additional Infomation About Product

Preliminary Datasheet RQJ0203WGDQA R07DS0292EJ0400 (Previous: REJ03G1319-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance R = 142 m typ (V = 4.5 V, I = 1.1 A) DS(on) GS D Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. Gate 1 3. Drain 2 S 1 Note: Marking is WG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 20 V DSS Gate to source voltage V +8 / 12 V GSS Drain current I 2.1 A D Note1 Drain peak current I 6.0 A D(pulse) Body - drain diode reverse drain current I 2.1 A DR Note2 Channel dissipation Pch 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0292EJ0400 Rev.4.00 Page 1 of 6 Mar 28, 2011 RQJ0203WGDQA Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V 20 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V +8 V I = +100 A, V = 0 (BR)GSS G DS V 12 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I +10 A V = +6 V, V = 0 GSS GS DS I 10 A V = 10 V, V = 0 GSS GS DS Drain to source leak current I 1 A V = 20 V, V = 0 DSS DS GS Gate to source cutoff voltage V 0.4 1.4 V V = 10 V, I = 1 mA GS(off) DS D Note3 Drain to source on state resistance R 142 180 m I = 1.1 A, V = 4.5 V DS(on) D GS Note3 R 216 300 m I = 1.1 A, V = 2.5 V DS(on) D GS Note3 Forward transfer admittance y 2.0 2.8 S I = 1.1 A, V = 10 V fs D DS Input capacitance Ciss 205 pF V = 10 V DS V = 0 GS Output capacitance Coss 57 pF f = 1 MHz Reverse transfer capacitance Crss 39 pF Turn - on delay time t 14 ns I = 1.1 A d(on) D V = 4.5 V Rise time t 36 ns GS r R = 9 L Turn - off delay time t 29 ns d(off) Rg = 4.7 Fall time t 9 ns f Total gate charge Qg 2.6 nC V = 10 V DD V = 4.5 V Gate to source charge Qgs 0.4 nC GS I = 2.1A D Gate to drain charge Qgd 1.1 nC Note3 Body - drain diode forward voltage V 0.85 1.1 V I = 2.1 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0292EJ0400 Rev.4.00 Page 2 of 6 Mar 28, 2011

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Renesas may also be referenced as

CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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Manufacturer Renesas Renesas
Product Category MOSFET MOSFET
Transistor Polarity P Channel P Channel
Brand Renesas Renesas
Continuous Drain Current Id - 2.1 A - 2.1 A
Drain Source Voltage Vds - 20 V - 20 V
On Resistance Rdson 0.142 Ohms 0.142 Ohms
Rdson Test Voltage Vgs - 4.5 V - 4.5 V
Power Dissipation Pd 800 mW 800 mW
Transistor Case Style SOT - 23 SOT - 23
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (12 - Jan - 2017) No SVHC (12 - Jan - 2017)