Product Information

RQJ0602EGDQA#H6

RQJ0602EGDQA#H6 electronic component of Renesas

Datasheet
MOSFET, P CH, 60V, 1.1A, SC-59A
Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3317 ea
Line Total: USD 0.33

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.5307
10 : USD 0.4259
100 : USD 0.3753
250 : USD 0.3238
500 : USD 0.2902

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

Preliminary Datasheet RQJ0602EGDQA R07DS0299EJ0600 Silicon P Channel MOS FET Rev.6.00 Power Switching Jan 10, 2014 Features Low on-resistance R = 490 m typ (V = 10 V, I = 0.55 A) DS(on) GS D Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. Gate 1 3. Drain 2 S 1 Note: Marking is EG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 60 V DSS Gate to source voltage V +10 / 20 V GSS Drain current I 1.1 A D Note1 Drain peak current I 3 A D(Pulse) Body - drain diode reverse drain current I 1.1 A DR Note2 Channel dissipation Pch 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 40 1 mm) R07DS0299EJ0600 Rev.6.00 Page 1 of 7 Jan 10, 2014 RQJ0602EGDQA Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V 60 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V +10 V I = +100 A, V = 0 (BR)GSS G DS Gate to source breakdown voltage V 20 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I +10 A V = +8 V, V = 0 GSS GS DS Gate to source leak current I 10 A V = 16 V, V = 0 GSS GS DS Drain to source leak current I 1 A V = 60 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.0 2.0 V V = 10 V, I = 1 mA GS(off) DS D Note3 Drain to source on state resistance R 490 613 m I = 0.55 A, V = 10 V DS(on) D GS Note3 R 613 854 m I = 0.55 A, V = 4.5 V DS(on) D GS Note3 Forward transfer admittance y 0.7 1.2 S I = 0.55 A, V = 10 V fs D DS Input capacitance Ciss 145 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 24 pF Reverse transfer capacitance Crss 11 pF Turn - on delay time t 23 ns I = 0.5 A, V = 10 V, d(on) D GS R = 20 , Rg = 4.7 Rise time t 24 ns L r Turn - off delay time t 28 ns d(off) Fall time t 19 ns f Total gate charge Qg 3.0 nC V = 10 V, V = 10 V, DD GS I = 1.1A Gate to source charge Qgs 0.5 nC D Gate to drain charge Qgd 0.6 nC Note3 Body - drain diode forward voltage V 0.9 V I = 1.5 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0299EJ0600 Rev.6.00 Page 2 of 7 Jan 10, 2014

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Renesas may also be referenced as

CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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