Product Information

X28HC256SI-12

X28HC256SI-12 electronic component of Renesas

Datasheet
EEPROM 32K X 8 EEPROM,CMOS,SOIC,HIGH SPEED,I.TEMP,120NS

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 100
Multiples : 100
100 : USD 22.5014
250 : USD 21.477
500 : USD 21.1515
1000 : USD 19.5366
N/A

Obsolete
     
Manufacturer
Product Category
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Access Time
Data Retention
Brand
Operating Supply Current
Operating Supply Voltage
Cnhts
Hts Code
Mxhts
Product Type
Programming Voltage
Subcategory
LoadingGif

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DATASHEET X28HC256 FN8108 Rev 5.00 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM August 27, 2015 The X28HC256 is a second generation high performance Features CMOS 32k x 8 EEPROM. It is fabricated with Intersils Access time: 90ns proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. Simple byte and page write -Single 5V supply The X28HC256 supports a 128-byte page write operation, effectively providing a 24s/byte write cycle, and enabling the -No external high voltages or V control circuits P-P entire memory to be typically rewritten in less than 0.8s. The -Self timed X28HC256 also features DATA polling and Toggle bit polling, - No erase before write two methods of providing early end of write detection. The - No complex programming algorithms X28HC256 also supports the JEDEC standard software data - No overerase problem protection feature for protecting against inadvertent writes during power-up and power-down. Low power CMOS - Active: 60mA Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention - Standby: 500A of 100 years. Software data protection - Protects data against system level inadvertent writes High speed page write capability Highly reliable Direct Write cell - Endurance: 100,000 cycles - Data retention: 100 years Early end of write detection -DATA polling - Toggle bit polling RoHS compliant 256k BIT EEPROM X BUFFERS ARRAY LATCHES AND DECODER A TO A 0 14 ADDRESS INPUTS I/O BUFFERS Y BUFFERS AND LATCHES LATCHES AND DECODER I/O TO I/O 0 7 DATA INPUTS/OUTPUTS CE CONTROL OE LOGIC AND TIMING WE V CC V SS FIGURE 1. BLOCK DIAGRAM FN8108 Rev 5.00 Page 1 of 19 August 27, 2015X28HC256 Ordering Information PART NUMBER ACCESS TIME TEMP. RANGE (Note 4)PART MARKING (ns) (C) PACKAGE PKG. DWG. X28HC256JZ-15 (Notes 1, 3) X28HC256J-15 ZHY 150 0 to +70 32 Ld PLCC (RoHS Compliant) N32.45x55 X28HC256JI-15 (Note 1) X28HC256JI-15 HY 150 -40 to +85 32 Ld PLCC N32.45x55 X28HC256JIZ-15 X28HC256JI-15 ZHY 150 -40 to +85 32 Ld PLCC (RoHS Compliant) N32.45x55 (Notes 1, 3) X28HC256PZ-15 X28HC256P-15 HYZ 150 0 to +70 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256PIZ-15 X28HC256PI-15 HYZ 150 -40 to +85 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256JZ-12 (Notes 1, 3) X28HC256J-12 ZHY 120 0 to +70 32 Ld PLCC (RoHS Compliant) N32.45x55 X28HC256JI-12 (Note 1) X28HC256JI-12 HY 120 -40 to +85 32 Ld PLCC N32.45x55 X28HC256JIZ-12 X28HC256JI-12 ZHY 120 -40 to +85 32 Ld PLCC (RoHS Compliant) N32.45x55 (Notes 1, 3) X28HC256PZ-12 X28HC256P-12 HYZ 120 0 to +70 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256PIZ-12 X28HC256PI-12 HYZ 120 -40 to +85 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256SZ-12 (Note 3) X28HC256S-12 HYZ 120 0 to +70 28 Ld SOIC (300mils RoHS Compliant) MDP0027 X28HC256SI-12 X28HC256SI-12 HY 120 -40 to +85 28 Ld SOIC (300mils) M28.3 X28HC256SIZ-12 (Note 3) X28HC256SI-12 HYZ 120 -40 to +85 28 Ld SOIC (300mils RoHS Compliant) MDP0027 X28HC256JZ-90 (Notes 1, 3) X28HC256J-90 ZHY 90 0 to +70 32 Ld PLCC (RoHS Compliant) N32.45x55 X28HC256JI-90 (Note 1) X28HC256JI-90 HY 90 -40 to +85 32 Ld PLCC N32.45x55 X28HC256JIZ-90 X28HC256JI-90 ZHY 90 -40 to +85 32 Ld PLCC (RoHS Compliant) N32.45x55 (Notes 1, 3) X28HC256PZ-90 X28HC256P-90 HYZ 90 0 to +70 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256PIZ-90 (Notes 2, 3) X28HC256PI-90 HYZ 90 -40 to +85 28 Ld PDIP (RoHS Compliant) E28.6 X28HC256SI-90 X28HC256SI-90 HY 90 -40 to +85 28 Ld SOIC (300mils) M28.3 X28HC256SIZ-90 (Note 3) X28HC256SI-90 HYZ 90 -40 to +85 28 Ld SOIC (300mils RoHS Compliant) MDP0027 NOTES: 1. Add T* suffix for tape and reel. Please refer to TB347 for details on reel specifications. 2. Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications. 3. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 4. For Moisture Sensitivity Level (MSL), please see product information page for X28HC256. For more information on MSL, please see tech brief TB363. FN8108 Rev 5.00 Page 2 of 19 August 27, 2015

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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