X28HC256SI-12 Renesas

X28HC256SI-12 electronic component of Renesas
X28HC256SI-12 Renesas
X28HC256SI-12 EEPROM
X28HC256SI-12  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of X28HC256SI-12 EEPROM across the USA, India, Europe, Australia, and various other global locations. X28HC256SI-12 EEPROM are a product manufactured by Renesas. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No.X28HC256SI-12
Manufacturer:Renesas
Category:EEPROM
Description:EEPROM 32K X 8 EEPROM,CMOS,SOIC,HIGH SPEED,I.TEMP,120NS
Datasheet:X28HC256SI-12 Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
N/A

Obsolete

Availability0
MOQ : 100
Multiples : 100
QtyUnit Price
100$ 25.0016
250$ 23.8633
500$ 23.5017
1000$ 21.7073
N/A

Obsolete
   
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Supply Voltage - Max
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Mxhts
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Programming Voltage
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We are delighted to provide the X28HC256SI-12 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the X28HC256SI-12 and other electronic components in the EEPROM category and beyond.

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DATASHEET X28HC256 FN8108 Rev 5.00 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM August 27, 2015 The X28HC256 is a second generation high performance Features CMOS 32k x 8 EEPROM. It is fabricated with Intersils Access time: 90ns proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. Simple byte and page write -Single 5V supply The X28HC256 supports a 128-byte page write operation, effectively providing a 24s/byte write cycle, and enabling the -No external high voltages or V control circuits P-P entire memory to be typically rewritten in less than 0.8s. The -Self timed X28HC256 also features DATA polling and Toggle bit polling, - No erase before write two methods of providing early end of write detection. The - No complex programming algorithms X28HC256 also supports the JEDEC standard software data - No overerase problem protection feature for protecting against inadvertent writes during power-up and power-down. Low power CMOS - Active: 60mA Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention - Standby: 500A of 100 years. Software data protection - Protects data against system level inadvertent writes High speed page write capability Highly reliable Direct Write cell - Endurance: 100,000 cycles - Data retention: 100 years Early end of write detection -DATA polling - Toggle bit polling RoHS compliant 256k BIT EEPROM X BUFFERS ARRAY LATCHES AND DECODER A TO A 0 14 ADDRESS INPUTS I/O BUFFERS Y BUFFERS AND LATCHES LATCHES AND DECODER I/O TO I/O 0 7 DATA INPUTS/OUTPUTS CE CONTROL OE LOGIC AND TIMING WE V CC V SS FIGURE 1. BLOCK DIAGRAM FN8108 Rev 5.00 Page 1 of 19 August 27, 2015X28HC256 Ordering Information PART NUMBER ACCESS TIME TEMP. RANGE (Note 4)PART MARKING (ns) (C) PACKAGE PKG. DWG. X28HC256JZ-15 (Notes 1, 3) X28HC256J-15 ZHY 150 0 to +70 32 Ld PLCC (RoHS Compliant) N32.45x55 X28HC256JI-15 (Note 1) X28HC256JI-15 HY 150 -40 to +85 32 Ld PLCC N32.45x55 X28HC256JIZ-15 X28HC256JI-15 ZHY 150 -40 to +85 32 Ld PLCC (RoHS Compliant) N32.45x55 (Notes 1, 3) X28HC256PZ-15 X28HC256P-15 HYZ 150 0 to +70 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256PIZ-15 X28HC256PI-15 HYZ 150 -40 to +85 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256JZ-12 (Notes 1, 3) X28HC256J-12 ZHY 120 0 to +70 32 Ld PLCC (RoHS Compliant) N32.45x55 X28HC256JI-12 (Note 1) X28HC256JI-12 HY 120 -40 to +85 32 Ld PLCC N32.45x55 X28HC256JIZ-12 X28HC256JI-12 ZHY 120 -40 to +85 32 Ld PLCC (RoHS Compliant) N32.45x55 (Notes 1, 3) X28HC256PZ-12 X28HC256P-12 HYZ 120 0 to +70 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256PIZ-12 X28HC256PI-12 HYZ 120 -40 to +85 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256SZ-12 (Note 3) X28HC256S-12 HYZ 120 0 to +70 28 Ld SOIC (300mils RoHS Compliant) MDP0027 X28HC256SI-12 X28HC256SI-12 HY 120 -40 to +85 28 Ld SOIC (300mils) M28.3 X28HC256SIZ-12 (Note 3) X28HC256SI-12 HYZ 120 -40 to +85 28 Ld SOIC (300mils RoHS Compliant) MDP0027 X28HC256JZ-90 (Notes 1, 3) X28HC256J-90 ZHY 90 0 to +70 32 Ld PLCC (RoHS Compliant) N32.45x55 X28HC256JI-90 (Note 1) X28HC256JI-90 HY 90 -40 to +85 32 Ld PLCC N32.45x55 X28HC256JIZ-90 X28HC256JI-90 ZHY 90 -40 to +85 32 Ld PLCC (RoHS Compliant) N32.45x55 (Notes 1, 3) X28HC256PZ-90 X28HC256P-90 HYZ 90 0 to +70 28 Ld PDIP (RoHS Compliant) E28.6 (Notes 2, 3) X28HC256PIZ-90 (Notes 2, 3) X28HC256PI-90 HYZ 90 -40 to +85 28 Ld PDIP (RoHS Compliant) E28.6 X28HC256SI-90 X28HC256SI-90 HY 90 -40 to +85 28 Ld SOIC (300mils) M28.3 X28HC256SIZ-90 (Note 3) X28HC256SI-90 HYZ 90 -40 to +85 28 Ld SOIC (300mils RoHS Compliant) MDP0027 NOTES: 1. Add T* suffix for tape and reel. Please refer to TB347 for details on reel specifications. 2. Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications. 3. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 4. For Moisture Sensitivity Level (MSL), please see product information page for X28HC256. For more information on MSL, please see tech brief TB363. FN8108 Rev 5.00 Page 2 of 19 August 27, 2015

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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