Product Information

2SA2088FRAT106Q

2SA2088FRAT106Q electronic component of ROHM

Datasheet
TRANSISTOR, AEC-Q101, PNP, -60V, SOT-323
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4837 ea
Line Total: USD 2.42

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 5
Multiples : 1
5 : USD 0.563
10 : USD 0.4046
100 : USD 0.2147
500 : USD 0.1686
1000 : USD 0.126
5000 : USD 0.1067

Read More Specifications

     
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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Additional Infomation About Product

AEC-Q101 Qualified Medium power transistor ( 60V, 0.5A) 2SA2088FRA Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 2.0 0.9 3) Strong discharge power for inductive load and capacitance load. 0.3 0.2 0.7 4) Complements the 2SC5876 2SC5876FRA (3) ( ) ( ) 2 1 Applications 0.65 0.65 0.15 1.3 Small signal low frequency amplifier (1) Emitter High speed switching Each lead has same dimensions (2) Base (3) Collector Abbreviated symbol : VM Structure PNP Silicon epitaxial planar transistor Packaging specifications Package Taping Code T106 Type Basic ordering unit (pieces) 3000 2SA2088FRA2SA2088 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 60 VCEO V Collector-emitter voltage 60 VEBO V Emitter-base voltage 6 DC IC 0.5 A Collector current 1 Pulsed ICP 1.0 A 2 PC mW Power dissipation 200 Tj C Junction temperature 150 Tstg C Range of storage temperature 55 to 150 1 Pw=10ms 2 Each terminal mounted on a recommended land www.rohm.com 1/3 2011.03 - Rev.B c 2011 ROHM Co., Ltd. All rights reserved. 1.25 2.1 0.1Min. 2SA2088FRA Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Condition Collector-emitter breakdown voltage BVCEO 60 V IC= 1mA BVCBO V Collector-base breakdown voltage 60 IC= 100A BVEBO V Emitter-base breakdown voltage 6 IE= 100A Collector cut-off current ICBO 1.0 A VCB= 40V IEBO 1.0 A Emitter cut-off current VEB= 4V IC= 100mA Collector-emitter saturation voltage VCE (sat) 150 500 mV IB= 10mA VCE= 2V 270 DC current gain hFE 120 IC= 50mA 1 VCE= 10V Transition frequency fT 400 MHz IE=100mA f=10MHz VCB= 10V Corrector output capacitance Cob 10 pF IE=0A f=1MHz IC= 500mA 2 ton ns Turn-on time 35 IB1= 50mA tstg ns Storage time 100 IB2=50mA Fall time tf 60 ns VCC 25V 1 Non repetitive pulse 2 See Switching charactaristics measurement circuits hFE RANK Q 120270 Electrical characteristic curves 1000 1000 1000 Ta=25C VCE= 2V Ta=25C VCC= 25V IC / IB=10 / 1 tstg 100 VCE= 5V Ta=125C VCE= 3V 100 100 tf Ta=25C VCE= 2V Ta= 40C ton 10 1 10 10 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Switching Time Fig.2 DC Current Gain vs. Fig.3 DC Current Gain vs. Collector Current () Collector Current () 10 10 10 IC / IB=10 / 1 Ta=25C IC / IB=10 / 1 1 1 IC / IB=100/1 Ta=125C IC / IB=20/1 1 Ta=25C IC / IB=10/1 Ta= 40C 0.1 0.1 Ta=125C Ta=25C Ta= 40C 0.01 0.01 0.1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Collector-Emitter Saturation Fig.5 Collector-Emitter Saturation Fig.6 Base-Emitter Saturation Voltage vs. Collector Current () Voltage vs. Collector Current () Voltage vs. Collecter Current www.rohm.com 2011.03 - Rev .B 2/3 c 2011 ROHM Co., Ltd. All rights reserved. COLLECTOR SATURATION SWITCHING TIME : (ns) VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION DC CURRENT GAIN : hFE VOLTAGE : VCE (sat) (V) BASE EMITTER SATURATION DC CURRENT GAIN : hFE VOLTAGE : VBE (sat) (V)

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