BD52E40G-MTR ROHM

BD52E40G-MTR electronic component of ROHM
BD52E40G-MTR ROHM
BD52E40G-MTR Unclassified
BD52E40G-MTR
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BD52E40G-MTR across the USA, India, Europe, Australia, and various other global locations. BD52E40G-MTR are a product manufactured by ROHM. We provide cost-effective solutions for BD52E40G-MTR, ensuring timely deliveries around the world.

Part No. BD52E40G-MTR
Manufacturer: ROHM
Category: Unclassified
Description: ROHM Semiconductor
High power N-channel MOSFET for high speed switching and high current flow.
Datasheet: BD52E40G-MTR Datasheet (PDF)
Price (USD)
5: USD 1.144 ea
Line Total: USD 5.72 
Availability : 0
  
QtyUnit Price
5$ 1.144
10$ 0.7375
100$ 0.5235
500$ 0.4669
1000$ 0.3714
5000$ 0.3208

Availability 0
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 1.144
10$ 0.7375
100$ 0.5235
500$ 0.4669
1000$ 0.3714
5000$ 0.3208

   
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No. Of Supervisors / Monitors
Digital Ic Case
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We are delighted to provide the BD52E40G-MTR from our ROHM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD52E40G-MTR and other electronic components in the ROHM manufacturer and beyond.

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The BD52E40G-MTR is a low voltage MOSFET transistor from ROHM. It has a maximum drain-source voltage of 60V and a maximum continuous drain current of 4A. The transistor is ideal for switching applications due to its fast switching speed and low gate charge. It also has a high maximum power dissipation of 350W and a low on resistance of just 0.14O.

RHE
RHM
ROHM Semicon
ROHM Semiconductor
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