BD8311NUV-E2 ROHM

Datasheet 3.5V to 11V, Integrated 2.5A MOSFET 1ch Boost Converter BD8311NUV General Description Key Specification BD8311NUV is a high-efficiency step-up switching Input Voltage Range: +3.5V to +11.0V regulator with built-in power MOSFET that can output Output Voltage Range: +4.0V to +11.0V 8V or 10V from a 4-battery voltage supply such as FET Maximum Current: 2.5A Li2cell or a 5V fixed power supply line. The built-in Switching Frequency: 1.2MHz(Typ) 80m N-Channel FET switch is capable of handling Nch FET ON-Resistance: 80m(Typ) output current up to 2.5A. This IC has a flexible phase Standby Current: 0A (Typ) compensation system and a switching frequency of Operating Temperature Range: -25C to +85C 1.2MHz allowing the use of smaller external output inductor and capacitor making the construction of a Package W (Typ) x D (Typ) x H (Max) compact power supply really easy. Features Built-In 2.5A/14V N-Channel FET Switch On-Chip Phase Compensation Between Input and Output of ERROR AMP. Output Current: 600mA at 10V (3.5V to 10V input) VSON010V3030 800mA at 8V (3.5V to 8V input) 3.00mm x 3.00mm x 1.00mm Built-In Soft-Start Function. Built-In Timer Latch System for Short Circuit Protection Function. Application General Portable Equipment like DSC/DVC Powered by 4 dry Batteries or Li2cell Typical Application Circuit Input: 3.5V to 10V, Output: 10V / 500 mA RSX2RSX01L201-30 L-30 (ROHM(ROHM) ) 10V/500mA 10V/500mA 2222FF GRMGRM3232EBEB313C1226C22KE616KE( Mur16 ata(M)urata) 44..77HH DEDE35183518EE( TO(TKOKO)O) PGND PGND LX Lx 5 6 .5V to 10 V VBAT=2.5~ 4.5V LXLx 10p PPGGNDND 10pF 4 7 10F 10F GRM31CB31E106KA75L( Murata) GRM31CB31E106KA75L(Murata) 1F 1F GRMGRM188188BB111A1105A10KA5K61A(6Mur1(Matau)rata) SSTBTB ON/OFF VVREGREG ON/OFF 3 8 200k200 k 10k 10k VVCCCC IINVNV 2 9 100k 1F 100k 1F GRM21BB11C105KA01(Murata) GRM21BB11C105KA01( Murata) 3.3~ 5.0V 22k 22k 3.5V to 10 V SSWWOOUTUT GNDGND 1 10 Figure 1. Typical Application Circuit Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays .w ww.rohm.com TSZ02201-0Q3Q0NZ00350-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/21 TSZ2211114001 17.Feb.2015 Rev.002 BD8311NUV Pin Configuration (TOP VIEW) GND SWOUT 10 1 VCC INV 9 2 VREG 8 STB 3 LX 4 7 PGND LX PGND 5 6 Figure 2. Pin Configuration Pin Description Pin No. Pin Name Function 1 GND Ground pin 2 VCC Supply voltage input pin 3 VREG 5V output terminal of regulator for internal circuit 4 , 5 LX Power switch terminal for coil 6 , 7 PGND Power transistor ground pin 8 STB ON/OFF terminal 9 INV ERROR AMP input pin 10 SWOUT STBSW for split resistance Block Diagram STB VREG VCC VREG STB VCC UVLO 5V REG Reference STBY IO VREG VREF FB H OSC Lx SCP 1.2MHz GND LX OSC16000 ount GND VREG STOP PRE PWM 80m DRIVER CONTROL PGND PGND ERROR AMP VREF SWOUT Soft SWOUT Start STB 50 INV INV Figure 3. Block Diagram www.rohm.com TSZ02201-0Q3Q0NZ00350-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/21 TSZ2211115001 17.Feb.2015 Rev.002 + + -