Datasheet Single-chip Type with Built-in FET Switching Regulator Series Step-up and inverted 2-channel DC/DC converter with Built-in Power MOSFET BD8316GWL Description Important Specifications The BD8316GWL is step-up and inverted 2-channel Input voltage range 2.55.5 V switching regulator with integrated internal high-side Output boost voltage Input voltage(max)~18 V MOSFET. With wide input range from 2.5~5.5V ,it Output inverted voltage -9.0-1.0 V suitable for application of portable item. In addition,The Maximum current 1 A (max) small package design is ideal for miniaturizing the Operating frequency 1.6 MHz (typ.) power supply. Nch FET ON resistance 230 m Pch FET ON resistance 230 m Features Standby current 1 A (max) Wide input voltage range of 2.5V to 5.5 V Package High frequency operation 1.6MHz Incorporates Nch FET of 230m/22V and Pch UCSP50L1 (WLCSP) 1.8mm1.5mm0.5mm, 43glid,11pin, Pow FET of 230m/15V Incorporates Soft Start (4.2msec(typ))and hight Application side switch of boost channel Independent ON/OFF signal(STB). Built-in LCD battery discharge SW for step up channel CCD battery Small package UCSP50L1( 1.8mm1.5mm, 4 Portable items that are represented by mobile phone and DSC 3 grid, 11pin, WLCSP) Circuits protection OCP,SCP,UVLO,TSD Typical Application Input: 2.5 to 5.5 V, ch1 output: 5.6 V / 200m A, ch2 output:5.6V/200mA 0.1uF/10V 10k 56k Vout1: -5.6V/200mA 4.7uF/10V 4.7uH VREF NON1 LX1 VDD Vin 2.55.5V 4.7uF/10V DIS1 EN CH1 STB1 EN CH STB2 HS2L 4.7uH Vout2: 5.6V/200mA LX2 GND INV2 4.7uF/10V 180k 30k Fig.1 Application schematic www.rohm.com TSZ02201-0Q1Q0AJ00170-1-2 2011 ROHM Co., Ltd. All rights reserved. 1/20 TSZ2211114001 2012.08.03 Rev. 003DatasheetDatasheet BD8316GWL Pin Description C B A 12 34 Fig.2 Pin assignment (Bottom view) Pin No. Pin Name Function A-1 VDD Power input voltage pin. Connect to input ceramic capacitor bigger than 0.47uF. A-2 HS2L Load SW output pin .Connect to inductor A-3 LX2 Boost channel drain Nch Power MOS. Connect to diode and inductor. A-4 GND Ground connection B-1 LX1 PchPowerMOS drain of boost channel. Connect to diode and inductor Enable pin of inverted channel. B-3 STB1 ON threshold set to 1.5V. Integrated pull down resistance (800k(typ)) Enable pin of boost channel. B-4 STB2 ON threshold set to 1.5V. Integrated pull down resistance (800k(typ)) Discharge SW of inverted channel. Connect to output of inverted channel. C-1 DIS1 STB1 disable , Output pin voltage is discharged by 100(typ) Reference voltage of inverted channel. C-2 VREF 1.0V(typ) is included in error amp offset Feedback pin of inverted channel. Connect to feedback resistance and set output voltage. C-3 NON1 The method of output voltage setting is P16/20. When inverted cannel is disable , the pin is discharged by integrated resistance (150(typ)) Feedback pin of boost channel. Connect to feedback resistance and set output voltage. C-4 INV2 The method of output voltage setting is P16/20. www.rohm.com TSZ02201-0Q1Q0AJ00170-1-2 2011 ROHM Co., Ltd. All rights reserved. 2/20 TSZ2211114001 2012.08.03 Rev. 003