Datasheet Serial EEPROM Series Automotive EEPROM 2 105 Operation I C BUS EEPROM (2-Wire) BR24Axxx-WM (1K 2K 4K 8K 16K 32K 64K) General Description 2 BR24Axxx-WM is a serial EEPROM of I C BUS interface method. Features Packages W(Typ.) x D(Typ.) x H(Max.) 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Wide temperature range -40 to +105 Other devices than EEPROM can be connected to the same port, saving microcontroller port SOP8 2.5V to 5.5V single power source operation most 5.00mm x 6.20mm x 1.71mm suitable for battery use Page write mode useful for initial value write at factory shipment Auto erase and auto end function at data rewrite Low current consumption *1 At write operation (5V) : 1.2mA (Typ.) At read operation (5V) : 0.2mA (Typ.) SOP- J8 At standby condition (5V) : 0.1A (Typ.) 4.90mm x 6.00mm x 1.65mm Write mistake prevention function Write (write protect) function added Write mistake prevention function at low voltage Data rewrite up to 1,000,000 times(Ta25 Data kept for 40 years(Ta25 Noise filter built in SCL / SDA terminal MSOP8 Shipment data all address FFh 2.90mm x 4.00mm x 0.90mm *1 BR24A32-WM, BR24A64-WM : 1.5mA AEC-Q100 Qualified Page write Number of Pages 8Byte 16Byte 32Byte BR24A04-WM Product BR24A01A-WM BR24A32-WM BR24A08-WM number BR24A02-WM BR24A64-WM BR24A16-WM BR24Axxx-WM Capacity Bit format Type Power source voltage SOP8 SOP-J8 MSOP8 1Kbit 1288 BR24A01A-WM 2.5V to 5.5V 2.5V to 5.5V 2Kbit 2568 BR24A02-WM 2.5V to 5.5V 4Kbit 5128 BR24A04-WM 2.5V to 5.5V 8Kbit 1K8 BR24A08-WM 16Kbit 2K8 BR24A16-WM 2.5V to 5.5V 32Kbit 4K8 BR24A32-WM 2.5V to 5.5V 2.5V to 5.5V 64Kbit 8K8 BR24A64-WM Product structure: Silicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100140-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/28 TSZ2211114001 29.Jan.2018 Rev.003 BR24Axxx-WM (1K 2K 4K 8K 16K 32K 64K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Ratings Unit Remarks Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) When using at Ta=25 or higher 4.5mW to be reduced per 1. Power Dissipation Pd 0.45 (SOP-J8) W When using at Ta=25 or higher 4.5mW to be reduced per 1. 0.31 (MSOP8) When using at Ta=25 or higher 3.1mW to be reduced per 1. Storage Temperature Tstg -65 to +125 Operating Temperature Topr -40 to +105 Terminal Voltage -0.3 to V +1.0 V CC Memory cell characteristics (V =2.5V to 5.5V) CC Limits Parameter Unit Conditions Min. Typ. Max 1,000,000 - - Ta25 *1 Number of data rewrite times Times 100,000 - - Ta105 40 - - Ta25 *1 Data hold years Years 10 - - Ta105 Shipment data all address FFh *1Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage V 2.5 to 5.5 CC V Input voltage V 0 to V IN CC Electrical characteristics (Unless otherwise specified, Ta=-40 to +105, VCC=2.5V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. HIGH input voltage VIH 0.7 V - - V CC LOW input voltage VIL - - 0.3 V V CC LOW output voltage 1 VOL - - 0.4 V IOL=3.0mA (SDA) Input leak current ILI -1 - 1 A VIN=0V to V CC Output leak current ILO -1 - 1 A VOUT=0V to V , (SDA) CC *1 2.0 V =5.5V,fSCL=400kHz, tWR=5ms, CC ICC1 - - mA *2 3.0 Byte write, Page write Current consumption V =5.5V,fSCL=400kHz CC ICC2 - - 0.5 mA Random read, current read, sequential read V =5.5V, SDASCL= V CC CC Standby current ISB - - 2.0 A A0, A1, A2=GND, WP=GND *1 BR24A01A/02/04/08/16-WM, *2 BR24A32/64-WM www.rohm.com TSZ02201-0R1R0G100140-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/28 TSZ2211115001 29.Jan.2018 Rev.003