Product Information

BR24A64F-WLBH2

BR24A64F-WLBH2 electronic component of ROHM

Datasheet
EEPROM I2C BUS 64K 2.5-5.5 Ind SOP8

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.5666 ea
Line Total: USD 4.57

208 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
183 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 3.887
10 : USD 3.519
100 : USD 3.1625
250 : USD 3.151
500 : USD 3.013
1000 : USD 2.8635
2500 : USD 2.829
5000 : USD 2.8175
10000 : USD 2.691

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
Packaging
Brand
Operating Supply Current
Operating Supply Voltage
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Datasheet Serial EEPROM Series Industrial EEPROM 2 105 Operation I C BUS EEPROM (2-Wire) BR24AxxF-WLB (1K 2K 4K 8K 16K 32K 64K) General Description This is the product guarantees long time support in Industrial market. 2 BR24AxxF-WLB is a serial EEPROM of I C BUS interface method. Features Package W(Typ.) x D(Typ.) x H(Max.) Long Time Support Product for Industrial Applications. 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Wide temperature range -40 to +105 Other devices than EEPROM can be connected to SOP8 the same port, saving microcontroller port 5.00mm x 6.20mm x 1.71mm 2.5V to 5.5V single power source operation most suitable for battery use Page write mode useful for initial value write at factory shipment Application Auto erase and auto end function at data rewrite Low current consumption Industrial Equipment *1 At write operation (5V) : 1.2mA (Typ.) At read operation (5V) : 0.2mA (Typ.) At standby condition (5V) : 0.1A (Typ.) Write mistake prevention function Write (write protect) function added Write mistake prevention function at low voltage Data rewrite up to 1,000,000 times(Ta25 Data kept for 40 years(Ta25 Noise filter built in SCL / SDA terminal Shipment data all address FFh *1 BR24A32F-WLB, BR24A64F-WLB : 1.5mA Page write Number of Pages 8Byte 16Byte 32Byte BR24A04F-WLB Product BR24A01AF-WLB BR24A32F-WLB BR24A08F-WLB number BR24A02F-WLB BR24A64F-WLB BR24A16F-WLB BR24AxxF-WLB Capacity Bit format Type Power source voltage Package 1Kbit 1288 BR24A01AF-WLB 2.5V to 5.5V 2Kbit 2568 BR24A02F-WLB 2.5V to 5.5V 4Kbit 5128 BR24A04F-WLB 2.5V to 5.5V 8Kbit 1K8 BR24A08F-WLB 2.5V to 5.5V SOP8 16Kbit 2K8 BR24A16F-WLB 2.5V to 5.5V 32Kbit 4K8 BR24A32F-WLB 2.5V to 5.5V 64Kbit 8K8 BR24A64F-WLB 2.5V to 5.5V Product structure: Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100240-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/26 TSZ2211114001 29.Jan.2018 Rev.003 BR24AxxF-WLB (1K 2K 4K 8K 16K 32K 64K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC Power Dissipation Pd 0.45 W When using at Ta=25 or higher 4.5mW to be reduced per 1. Storage Temperature Tstg -65 to +125 Operating Temperature Topr -40 to +105 Terminal Voltage -0.3 to V +1.0 V CC Memory cell characteristics (VCC=2.5V to 5.5V) Limits Parameter Unit Conditions Min. Typ. Max 1,000,000 - - Ta25 *1 Number of data rewrite times Times 100,000 - - Ta105 40 - - Ta25 *1 Data hold years Years 10 - - Ta105 Shipment data all address FFh *1Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage V 2.5 to 5.5 CC V Input voltage V 0 to V IN CC Electrical characteristics (Unless otherwise specified, Ta=-40 to +105, V =2.5V to 5.5V) CC Limits Parameter Symbol Unit Conditions Min. Typ. Max. HIGH input voltage VIH 0.7 V - - V CC LOW input voltage VIL - - 0.3 V V CC LOW output voltage 1 VOL - - 0.4 V IOL=3.0mA (SDA) Input leak current ILI -1 - 1 A VIN=0V to V CC Output leak current ILO -1 - 1 A VOUT=0V to V , (SDA) CC *1 2.0 V =5.5V,fSCL=400kHz, tWR=5ms, CC ICC1 - - mA *2 3.0 Byte write, Page write Current consumption VCC =5.5V,fSCL=400kHz ICC2 - - 0.5 mA Random read, current read, sequential read V =5.5V, SDASCL= V CC CC Standby current ISB - - 2.0 A A0, A1, A2=GND, WP=GND *1 BR24A01AF/02F/04F/08F/16F-WLB, *2 BR24A32F/64F-WLB www.rohm.com TSZ02201-0R1R0G100240-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/26 TSZ2211115001 29.Jan.2018 Rev.003

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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