Product Information

BR24G16QUZ-3TR

BR24G16QUZ-3TR electronic component of ROHM

Datasheet
EEPROM I2C BUS 16K 1.6-5.5 Std VMMP008Z1830

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 0.7469
10 : USD 0.6733
100 : USD 0.475
500 : USD 0.4612
1000 : USD 0.4373
4000 : USD 0.3901
8000 : USD 0.384
24000 : USD 0.3768
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
Packaging
Brand
Cnhts
Hts Code
Mxhts
Operating Supply Current
Operating Supply Voltage
Product Type
Factory Pack Quantity :
Subcategory
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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G16-3 General Description 2 BR24G16-3 is a 16Kbit serial EEPROM of I C BUS Interface. Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. Not Recommended for All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 TSSOP-B8 the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation Up to 16 Byte in Page Write Mode Bit Format 2K x 8bit Self-timed Programming Cycle SOP8 TSSOP-B8M Low Current Consumption 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.10mm Prevention of Write Mistake WP(Write Protect) Function added Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention SOP- J8M TSSOP-B8J Noise filter built in SCL / SDA terminal 4.90mm x 6.00mm x 1.80mm 3.00mm x 4.90mm x 1.10mm Initial delivery state FFh SOP- J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm VSON008X2030 SSOP-B8 2.00mm x 3.00mm x 0.60mm 3.00mm x 6.40mm x 1.35mm VMMP008Z1830 1.85mm x 3.00mm x 0.40mm Figure 1. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100200-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 11.Jun.2019 Rev.009 Datasheet BR24G16-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8M) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Power Dissipation Pd 0.33 (TSSOP-B8M) W Derate by 3.3mW/C when operating above Ta=25C 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (Note1) 0.80 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Derate by 2.1mW/C when operating above Ta=25C 0.21 (VMMP008Z1830) Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Output Voltage Voltage/Output Voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (Note2) Write Cycles 1,000,000 - - Times (Note2) Data Retention 40 - - Years (Note2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage V 1.6 to 5.5 CC V Input Voltage VIN 0 to Vcc DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V (Note3) Input Low Voltage1 VIL1 -0.3 - +0.3Vcc V 1.7VVcc5.5V Input High Voltage2 V 0.8V - V +1.0 V 1.6VV <1.7V IH2 cc cc cc (Note3) Input Low Voltage2 VIL2 -0.3 - +0.2Vcc V 1.6VVcc<1.7V Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VV 5.5V (SDA) OL1 OL cc Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVcc<2.5V (SDA) Input Leakage Current ILI -1 - +1 A VIN=0 to Vcc Output Leakage Current I -1 - +1 A V =0 to V (SDA) LO OUT cc Vcc=5.5V, fSCL=400kHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 mA Byte write, Page write Vcc=5.5V, fSCL=400kHz Supply Current (Read) ICC2 - - 0.5 mA Random read, current read, sequential read V =5.5V, SDA, SCL=V cc cc Standby Current I - - 2.0 A SB A0,A1,A2=GND,WP=GND (Note3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100200-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/36 TSZ22111 15 001 11.Jun.2019 Rev.009

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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