Product Information

BR24L04FV-WE2

BR24L04FV-WE2 electronic component of ROHM

Datasheet
ROHM Semiconductor EEPROM SRL 512X8 BIT

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5968 ea
Line Total: USD 0.6

5460 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5460 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5968
10 : USD 0.5394
100 : USD 0.4922
500 : USD 0.4841
1000 : USD 0.4657
2500 : USD 0.3818

1243 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 129
Multiples : 1
129 : USD 0.8258
250 : USD 0.7926
500 : USD 0.764
1000 : USD 0.7392

1430 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 60
Multiples : 1
60 : USD 0.5574
100 : USD 0.5249
200 : USD 0.5135
500 : USD 0.4989
1000 : USD 0.4858

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Access Time
Data Retention
Supply Current - Max
Series
Packaging
Brand
Operating Supply Current
Operating Supply Voltage
Factory Pack Quantity :
Height
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Cnhts
Hts Code
Mxhts
Product Type
Programming Voltage
Subcategory
Taric
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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K) General Description 2 BR24Lxxx-W series is a serial EEPROM of I C BUS interface method Features Packages W(Typ.) x D(Typ.) x H(Max.) 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port TSSOP-B8 SOP8 *1 1.8V to 5.5V single power source action most 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm suitable for battery use Page write mode useful for initial value write at factory shipment Highly reliable connection by Au pad and Au wire Auto erase and auto end function at data write SOP- J8 TSSOP-B8J Low current consumption *2 4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm At write operation (5V) : 1.2mA (Typ.) At read operation (5V) : 0.2mA (Typ.) At standby operation (5V) : 0.1A (Typ.) Write mistake prevention function Write (write protect) function added Write mistake prevention function at low voltage SSOP-B8 MSOP8 3.00mm x 6.40mm x 1.35mm 2.90mm x 4.00mm x 0.90mm Data rewrite up to 1,000,000 times Data kept for 40 years Noise filter built in SCL / SDA terminal Shipment data all address FFh *1 BR24L02-W, BR24L16-W, BR24L32-W : 1.7V to 5.5V VSON008X2030 *2 BR24L32-W, BR24L64-W : 1.5mA 2.00mm x 3.00mm x 0.60mm Page write Number of 8Byte 16Byte 32Byte Pages BR24L04-W Product BR24L01A-W BR24L32-W BR24L08-W number BR24L02-W BR24L64-W BR24L16-W BR24Lxxx-W Series Bit Power source VSON008 Capacity Type SOP8 SOP-J8 SSOP-B8TSSOP-B8MSOP8 TSSOP-B8J format Voltage X2030 1Kbit 1288 BR24L01A-W 1.8V to 5.5V 2Kbit 2568 BR24L02-W 1.7V to 5.5V 4Kbit 5128 BR24L04-W 1.8V to 5.5V 8Kbit 1K8 BR24L08-W 1.8V to 5.5V 16Kbit 2K8 BR24L16-W 1.7V to 5.5V 32Kbit 4K8 BR24L32-W 1.7V to 5.5V 64Kbit 8K8 BR24L64-W 1.8V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100290-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/36 TSZ2211114001 21.AUG.2012 Rev.001Datasheet BR24Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC 450 (SOP8) When using at Ta=25 or higher 4.5mW to be reduced per 1. 450 (SOP-J8) When using at Ta=25 or higher 4.5mW to be reduced per 1. 300 (SSOP-B8) When using at Ta=25 or higher 3.0mW to be reduced per 1. Power Dissipation Pd 330 (TSSOP-B8) mW When using at Ta=25 or higher 3.3mW to be reduced per 1. 310 (TSSOP-B8J) When using at Ta=25 or higher 3.1mW to be reduced per 1. 310 (MSOP8) When using at Ta=25 or higher 3.1mW to be reduced per 1. 300 (VSON008X2030) When using at Ta=25 or higher 3.0mW to be reduced per 1. Storage Temperature Tstg 65 to +125 Operating Temperature Topr 40 to +85 Terminal Voltage -0.3 to Vcc+1.0 V *1 Memory cell characteristics (Ta=25, Vcc=1.8V to 5.5V) Limits Parameter Unit Min. Typ. Max. *2 Number of data rewrite times 1,000,000 - - Times *2 Data hold years 40 - - Years Shipment data all address FFh *1 BR24L02/16/32-W : 1.7V to 5.5V *2 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage Vcc 1.8 to 5.5 *1 V Input voltage V 0 to Vcc IN *1 BR24L02/16/32-W : 1.7V to 5.5V *1 Electrical Characteristics (Unless otherwise specified, Ta=-40 to +85, VCC=1.8V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. *2 HIGH input voltage 1 VIH1 0.7Vcc - Vcc +1.0 V 2.5Vcc5.5V *2 LOW input voltage 1 VIL1 -0.3 - 0.3 Vcc V 2.5Vcc5.5V *2 HIGH input voltage 2 VIH2 0.8Vcc - Vcc +1.0 V 1.8Vcc2.5V *2 LOW input voltage 2 VIL2 -0.3 - 0.2 Vcc V 1.8Vcc2.5V *3 HIGH input voltage 3 VIH3 0.8Vcc - Vcc +1.0 V 1.7Vcc1.8V *4 HIGH input voltage 3 VIH3 0.9Vcc - Vcc +1.0 V 1.7Vcc1.8V *2 LOW input voltage 3 VIL3 -0.3 - 0.1 Vcc V 1.7Vcc1.8V LOW output voltage 1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V, (SDA) LOW output voltage 2 VOL2 - - 0.2 V IOL=0.7mA, 1.7VVcc2.5V, (SDA) Input leak current ILI -1 - 1 AVIN=0V to Vcc Output leak current ILO -1 - 1 AVOUT=0V to Vcc, (SDA) *5 2.0 Vcc=5.5V,fSCL=400kHz, tWR=5ms, ICC1 - - mA *6 Current consumption at Byte write, Page write 3.0 action Vcc=5.5V,fSCL=400kHz ICC2 - - 0.5 mA Random read, current read,sequential read Vcc=5.5V, SDASCL=Vcc Standby current ISB - - 2.0 A A0, A1, A2=GND, WP=GND *1 BR24L02/16/32-W : 1.7V to 5.5V, *2 BR24L16/32-W, *3 BR24L02/16-W, *4 BR24L32-W *5 BR24L01A/02/04/08/16-W, *6 BR24L32/64-W www.rohm.com TSZ02201-0R2R0G1000290-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/36 TSZ2211115001 21.AUG.2012 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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