Rcaflga_j Lmrc
High Reliability Serial EEPROMs
SPI BUS Serial EEPROMs
BR25family
BR25L010-W series, BR25L020-W series, BR25L040-W series, BR25L080-W series,
BR25L160-W series, BR25L320-W series, BR25L640-W series
Lm, /.../[email protected]
Description
BR25L -W series is a serial EEPROM of SPI BUS interface method.
Features
Page write
Number of
16 Byte 32 Byte
pages
BR25L080-W
BR25L010-W
BR25L160-W
Product
BR25L020-W
number BR25L320-W
BR25L040-W
BR25L640-W
*1 BR25L080/160-W : SOP8, SOP-J8, SSOP-B8, TSSOP-B8
*2 BR25L320/640-W : SOP8, SOP-J8
BR25L series
Power source SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J
Capacity Bit format Type
voltage F FJ FV FVT FVM FVJ
1Kbit 128 X 8 BR25L010-W 1.8 ~ 5.5V
2Kbit 256 X 8 BR25L020-W 1.8 ~ 5.5V
4Kbit 512 X 8 BR25L040-W 1.8 ~ 5.5V
8Kbit 1K X 8 BR25L080-W 1.8 ~ 5.5V
16Kbit 2K X 8 BR25L160-W 1.8 ~ 5.5V
32Kbit 4K X 8 BR25L320-W 1.8 ~ 5.5V
64Kbit 8K X 8 BR25L640-W 1.8 ~ 5.5V
www.rohm.com
1/16 2010.07 - Rev. B
2010 ROHM Co., Ltd. All rights reserved.
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W Technical Note
Absolute maximum ratings (Ta = 25C) Recommended action conditions
Parameter Symbol Limits Unit
Parameter Symbol Limits Unit
Impressed voltage VCC -0.3 ~ +6.5 V Power source voltage VCC 1.8 ~ 5.5
V
*1 Input voltage Vin 0 ~ VCC
450(SOP8)
*2
450(SOP-J8)
Memory cell characteristics (Ta=25C, VCC=1.8 ~ 5.5V)
mW
Permissible
*3
300(SSOP-B8)
Limits
Pd
dissipation
Parameter Unit
*4
Min. Typ. Max.
330(TSSOP-B8)
*1
Number of data rewrite times 1,000,000 Times
*5
310(MSOP8)
*1
Data hold years 40 Years
*6
310(TSSOP-B8J)
*1:Not 100% TESTED
Storage
Tstg -65 ~ +125 C
temperature range
Operating
Input / output capacity (Ta=25C, frequency=5MHz)
Topr -40 ~ +85 C
temperature range
Terminal voltage -0.3 ~ VCC+0.3 V Parameter Symbol Conditions Min. Max. Unit
*1
Input capacity CIN VIN=GND 8pF
When using at Ta = 25C or higher, 4.5mW (*1, *2), 3.0mW (*3),
3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1C
*1
Output capacity COUT VOUT=GND 8pF
*1:Not 100% TESTED
Electrical characteristics (Unless otherwise specified, Ta = 40 ~ +85C, VCC = 1.8 ~ 5.5V)
Limits
Parameter Symbol Unit Conditions
Min. Typ. Max.
0.7x VCC input voltage 1 VIH1 V 1.8VCC5.5V
VCC +0.3
0.3x input voltage 1 VIL1 -0.3 V 1.8VCC5.5V
VCC output voltage 1 VOL1 0 0.4 V IOL=2.1mA(VCC=2.5V ~ 5.5V) output voltage 2 VOL2 0 0.2 IOL=150A(VCC=1.8V ~ 2.5V)
V
VCC
= = output voltage 1 VOH1 VCC V IOH -0.4mA(VCC 2.5V ~ 5.5V)
-0.5
VCC
VCC V output voltage 2 VOH2 IOH=-100A(VCC=1.8V ~ 2.5V)
-0.2
Input leak current ILI -1 1 A =
VIN 0 ~ VCC
Output leak current ILO -1 1 A = =
VOUT 0 ~ VCC,CS VCC
= = =
VCC 1.8V,fSCK 2MHz,tE/W 5ms
Byte write
1.0 mA
ICC1
Page write
Write status register
VCC=2.5V,fSCK=5MHz,tE/W=5ms
Current consumption at write Byte write
2.0 mA
ICC2
action Page write
Write status register
= = =
VCC 5.5V,fSCK 5MHz,tE/W 5ms
Byte write
ICC3 3.0 mA
Page write
Write status register
= =
VCC 2.5V,fSCK 5MHz
Read
ICC4m 1.5A
Current consumption at read Read status register
action
VCC=5.5V,fSCK=5MHz
Read
2.0 mA
ICC5
Read status register
=
VCC 5.5V
Standby current ISB 2 A
= = = = = =
CS HOLD WP VCC,SCK SI VCC or GND,SO=OPEN
Radiation resistance design is not made.
Block diagram
VOLTAGE
INSTRUCTION DECODE
DETECTION
CS
CONTROL CLOCK
WRITE HIGH VOLTAGE
GENERATION
SCK
INHIBITION GENERATOR
INSTRUCTION
SI
REGISTER
STATUS REGISTER
ADDRESS ADDRESS
*1 7bit : BR25L010-W
7~13bit *1
HOLD
7~13bit *1
REGISTER DECODER
8bit : BR25L020-W
1K~64K
9bit : BR25L040-W
EEPROM
10bit : BR25L080-W
WP
DATA READ/WRITE 11bit : BR25L160-W
8bit 8bit
12bit : BR25L320-W
REGISTER AMP
13bit : BR25L640-W
SO
Fig.1 Block diagram
www.rohm.com
2/16
2010.07 - Rev. B
2010 ROHM Co., Ltd. All rights reserved.