Datasheet Serial EEPROM Series Standard EEPROM SPI BUS EEPROM BR25Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K) General Description BR25Lxxx-W series is a serial EEPROM of SPI BUS interface method. Features Packages W(Typ.) x D(Typ.) x H(Max.) High speed clock action up to 5MHz (Max.) Wait function by HOLD terminal Part or whole of memory arrays settable as read only memory area by program 1.8V to 5.5V single power source action most suitable for battery use DIP-T8 TSSOP-B8 Page write mode useful for initial value write at 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm factory shipment Highly reliable connection by Au pad and Au wire For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) Auto erase and auto end function at data rewrite Low current consumption SOP8 TSSOP-B8J At write action (5V) : 1.5mA (Typ.) 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm At read action (5V) : 1.0mA (Typ.) At standby action (5V) : 0.1A (Typ.) Address auto increment function at read action Write mistake prevention function Write prohibition at power on SOP- J8 MSOP8 Write prohibition by command code (WRDI) 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm Write prohibition by WP pin Write prohibition block setting by status registers (BP1, BP0) Write mistake prevention function at low voltage Data at shipment Memory array : FFh, status SSOP-B8 register WPEN, BP1, BP0 : 0 3.00mm x 6.40mm x 1.35mm Data kept for 40 years Data rewrite up to 1,000,000 times Page write Number of 16Byte 32Byte pages BR25L080-W BR25L010-W Product BR25L160-W BR25L020-W number BR25L320-W BR25L040-W BR25L640-W BR25L Series DIP-T8 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J Power source Capacity Bit format Type voltage F FJ FV FVT FVM FVJ 1Kbit 128 X 8 BR25L010-W 1.8 ~ 5.5V 2Kbit 256 X 8 BR25L020-W 1.8 ~ 5.5V 4Kbit 512 X 8 BR25L040-W 1.8 ~ 5.5V 8Kbit 1K X 8 BR25L080-W 1.8 ~ 5.5V 16Kbit 2K X 8 BR25L160-W 1.8 ~ 5.5V 32Kbit 4K X 8 BR25L320-W 1.8 ~ 5.5V 64Kbit 8K X 8 BR25L640-W 1.8 ~ 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100350-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/35 TSZ2211114001 22.JAN.2013 Rev.002Datasheet BR25Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Limits Unit Remarks Impressed voltage V -0.3 to +6.5 V CC 800 (DIP-T8) When using at Ta=25 or higher, 8.0mW to be reduced per 1. 450 (SOP8) When using at Ta=25 or higher, 4.5mW to be reduced per 1. 450 (SOP-J8) When using at Ta=25 or higher, 4.5mW to be reduced per 1. Permissible Pd 300 (SSOP-B8) mW When using at Ta=25 or higher, 3.0mW to be reduced per 1. dissipation 330 (TSSOP-B8) When using at Ta=25 or higher, 3.3mW to be reduced per 1. 310 (MSOP8) When using at Ta=25 or higher, 3.1mW to be reduced per 1. 310 (TSSOP-B8J) When using at Ta=25 or higher, 3.1mW to be reduced per 1. Storage temperature Tstg 65 to +125 range Operating temperature Topr 40 to +85 range Terminal Voltage -0.3 to Vcc+0.3 V Memory cell characteristics (Ta=25C , Vcc=1.8V to 5.5V) Limits Parameter Unit Min. Typ. Max. Number of data rewrite times *1 1,000,000 - - Times Data hold years *1 40 - - Years *1 Not 100% TESTED Recommended Operating Ratings Unit Parameter Symbol Limits Power source voltage Vcc 1.8 to 5.5 V Input voltage Vin 0 to Vcc Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Min. Max. Unit Conditions Input capacity *1 C 8 V =GND IN IN pF Output capacity *1 C 8 V =GND OUT OUT *1 Not 100% TESTED. Electrical Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.8V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. H input voltage1 VIH 0.7Vcc Vcc+0.3 V 1.8VVCC5.5V L input voltage1 VIL -0.3 0.3Vcc V 1.8VVCC5.5V L output voltage1 VOL1 0 0.4 V IOL=2.1mA(VCC=2.5V to 5.5V) L output voltage2 VOL2 0 0.2 V IOL=150A(VCC=1.8V to 2.5V) H output voltage1 VOH1 Vcc-0.5 Vcc V IOH=-0.4mA(VCC=2.5V to 5.5V) H output voltage2 VOH2 Vcc-0.2 Vcc V IOH=-100A(VCC=1.8V to 2.5V) Input leak current ILI -1 1 AV =0 to Vcc IN Output leak current ILO -1 1 A VOUT=0 to Vcc, CS=VCC Vcc=1.8V, fSCK=2MHz, tE/W=5ms ICC1 1.0 mA Byte write, Page write, Write status register Current consumption at Vcc=2.5V, fSCK=5MHz, tE/W=5ms write action ICC2 2.0 mA Byte write, Page write, Write status register Vcc=5.5V, fSCK=5MHz, tE/W=5ms ICC3 3.0 mA Byte write, Page write, Write status register Vcc=2.5V, fSCK=5MHz Current consumption at ICC4 1.5 mA Read, Read status register read action Vcc=5.5V, fSCK=5MHz ICC5 2.0 mA Read, Read status register Vcc=5.5V,SO=OPEN Standby current ISB 2 A CS=HOLD=WP=Vcc, SCK=SI=Vcc or =GND www.rohm.com TSZ02201-0R2R0G100350-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/35 TSZ2211115001 22.JAN.2013 Rev.002