Rcaflga j Lmrc High Reliability Serial EEPROMs SPI BUS Serial EEPROMs BR25family BR25L010-W series, BR25L020-W series, BR25L040-W series, BR25L080-W series, BR25L160-W series, BR25L320-W series, BR25L640-W series Lm, /.../C R.3 Description BR25L -W series is a serial EEPROM of SPI BUS interface method. Features Page write Number of 16 Byte 32 Byte pages BR25L080-W BR25L010-W BR25L160-W Product BR25L020-W number BR25L320-W BR25L040-W BR25L640-W *1 BR25L080/160-W : SOP8, SOP-J8, SSOP-B8, TSSOP-B8 *2 BR25L320/640-W : SOP8, SOP-J8 BR25L series Power source SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J Capacity Bit format Type voltage F FJ FV FVT FVM FVJ 1Kbit 128 X 8 BR25L010-W 1.8 ~ 5.5V 2Kbit 256 X 8 BR25L020-W 1.8 ~ 5.5V 4Kbit 512 X 8 BR25L040-W 1.8 ~ 5.5V 8Kbit 1K X 8 BR25L080-W 1.8 ~ 5.5V 16Kbit 2K X 8 BR25L160-W 1.8 ~ 5.5V 32Kbit 4K X 8 BR25L320-W 1.8 ~ 5.5V 64Kbit 8K X 8 BR25L640-W 1.8 ~ 5.5V www.rohm.com 1/16 2010.07 - Rev. B 2010 ROHM Co., Ltd. All rights reserved. BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W Technical Note Absolute maximum ratings (Ta = 25C) Recommended action conditions Parameter Symbol Limits Unit Parameter Symbol Limits Unit Impressed voltage VCC -0.3 ~ +6.5 V Power source voltage VCC 1.8 ~ 5.5 V *1 Input voltage Vin 0 ~ VCC 450(SOP8) *2 450(SOP-J8) Memory cell characteristics (Ta=25C, VCC=1.8 ~ 5.5V) mW Permissible *3 300(SSOP-B8) Limits Pd dissipation Parameter Unit *4 Min. Typ. Max. 330(TSSOP-B8) *1 Number of data rewrite times 1,000,000 Times *5 310(MSOP8) *1 Data hold years 40 Years *6 310(TSSOP-B8J) *1:Not 100% TESTED Storage Tstg -65 ~ +125 C temperature range Operating Input / output capacity (Ta=25C, frequency=5MHz) Topr -40 ~ +85 C temperature range Terminal voltage -0.3 ~ VCC+0.3 V Parameter Symbol Conditions Min. Max. Unit *1 Input capacity CIN VIN=GND 8pF When using at Ta = 25C or higher, 4.5mW (*1, *2), 3.0mW (*3), 3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1C *1 Output capacity COUT VOUT=GND 8pF *1:Not 100% TESTED Electrical characteristics (Unless otherwise specified, Ta = 40 ~ +85C, VCC = 1.8 ~ 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. 0.7x VCC input voltage 1 VIH1 V 1.8VCC5.5V VCC +0.3 0.3x input voltage 1 VIL1 -0.3 V 1.8VCC5.5V VCC output voltage 1 VOL1 0 0.4 V IOL=2.1mA(VCC=2.5V ~ 5.5V) output voltage 2 VOL2 0 0.2 IOL=150A(VCC=1.8V ~ 2.5V) V VCC = = output voltage 1 VOH1 VCC V IOH -0.4mA(VCC 2.5V ~ 5.5V) -0.5 VCC VCC V output voltage 2 VOH2 IOH=-100A(VCC=1.8V ~ 2.5V) -0.2 Input leak current ILI -1 1 A = VIN 0 ~ VCC Output leak current ILO -1 1 A = = VOUT 0 ~ VCC,CS VCC = = = VCC 1.8V,fSCK 2MHz,tE/W 5ms Byte write 1.0 mA ICC1 Page write Write status register VCC=2.5V,fSCK=5MHz,tE/W=5ms Current consumption at write Byte write 2.0 mA ICC2 action Page write Write status register = = = VCC 5.5V,fSCK 5MHz,tE/W 5ms Byte write ICC3 3.0 mA Page write Write status register = = VCC 2.5V,fSCK 5MHz Read ICC4m 1.5A Current consumption at read Read status register action VCC=5.5V,fSCK=5MHz Read 2.0 mA ICC5 Read status register = VCC 5.5V Standby current ISB 2 A = = = = = = CS HOLD WP VCC,SCK SI VCC or GND,SO=OPEN Radiation resistance design is not made. Block diagram VOLTAGE INSTRUCTION DECODE DETECTION CS CONTROL CLOCK WRITE HIGH VOLTAGE GENERATION SCK INHIBITION GENERATOR INSTRUCTION SI REGISTER STATUS REGISTER ADDRESS ADDRESS *1 7bit : BR25L010-W 7~13bit *1 HOLD 7~13bit *1 REGISTER DECODER 8bit : BR25L020-W 1K~64K 9bit : BR25L040-W EEPROM 10bit : BR25L080-W WP DATA READ/WRITE 11bit : BR25L160-W 8bit 8bit 12bit : BR25L320-W REGISTER AMP 13bit : BR25L640-W SO Fig.1 Block diagram www.rohm.com 2/16 2010.07 - Rev. B 2010 ROHM Co., Ltd. All rights reserved.