X-On Electronics has gained recognition as a prominent supplier of BR25L160FV-WE2 eeprom across the USA, India, Europe, Australia, and various other global locations. BR25L160FV-WE2 eeprom are a product manufactured by ROHM. We provide cost-effective solutions for eeprom, ensuring timely deliveries around the world.

BR25L160FV-WE2

BR25L160FV-WE2 electronic component of ROHM
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Part No.BR25L160FV-WE2
Manufacturer: ROHM
Category:EEPROM
Description: EEPROM Serial-SPI 16K-bit 2K x 8 2.5V/3.3V/5V 8-Pin SSOP-B T/R
Datasheet: BR25L160FV-WE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.9079 ea
Line Total: USD 9.08

Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
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0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 10
Multiples : 1
10 : USD 0.9079

     
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We proudly offer the BR25L160FV-WE2 EEPROM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the BR25L160FV-WE2 EEPROM.

Rcaflga j Lmrc High Reliability Serial EEPROMs SPI BUS Serial EEPROMs BR25family BR25L010-W series, BR25L020-W series, BR25L040-W series, BR25L080-W series, BR25L160-W series, BR25L320-W series, BR25L640-W series Lm, /.../C R.3 Description BR25L -W series is a serial EEPROM of SPI BUS interface method. Features Page write Number of 16 Byte 32 Byte pages BR25L080-W BR25L010-W BR25L160-W Product BR25L020-W number BR25L320-W BR25L040-W BR25L640-W *1 BR25L080/160-W : SOP8, SOP-J8, SSOP-B8, TSSOP-B8 *2 BR25L320/640-W : SOP8, SOP-J8 BR25L series Power source SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J Capacity Bit format Type voltage F FJ FV FVT FVM FVJ 1Kbit 128 X 8 BR25L010-W 1.8 ~ 5.5V 2Kbit 256 X 8 BR25L020-W 1.8 ~ 5.5V 4Kbit 512 X 8 BR25L040-W 1.8 ~ 5.5V 8Kbit 1K X 8 BR25L080-W 1.8 ~ 5.5V 16Kbit 2K X 8 BR25L160-W 1.8 ~ 5.5V 32Kbit 4K X 8 BR25L320-W 1.8 ~ 5.5V 64Kbit 8K X 8 BR25L640-W 1.8 ~ 5.5V www.rohm.com 1/16 2010.07 - Rev. B 2010 ROHM Co., Ltd. All rights reserved. BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W Technical Note Absolute maximum ratings (Ta = 25C) Recommended action conditions Parameter Symbol Limits Unit Parameter Symbol Limits Unit Impressed voltage VCC -0.3 ~ +6.5 V Power source voltage VCC 1.8 ~ 5.5 V *1 Input voltage Vin 0 ~ VCC 450(SOP8) *2 450(SOP-J8) Memory cell characteristics (Ta=25C, VCC=1.8 ~ 5.5V) mW Permissible *3 300(SSOP-B8) Limits Pd dissipation Parameter Unit *4 Min. Typ. Max. 330(TSSOP-B8) *1 Number of data rewrite times 1,000,000 Times *5 310(MSOP8) *1 Data hold years 40 Years *6 310(TSSOP-B8J) *1:Not 100% TESTED Storage Tstg -65 ~ +125 C temperature range Operating Input / output capacity (Ta=25C, frequency=5MHz) Topr -40 ~ +85 C temperature range Terminal voltage -0.3 ~ VCC+0.3 V Parameter Symbol Conditions Min. Max. Unit *1 Input capacity CIN VIN=GND 8pF When using at Ta = 25C or higher, 4.5mW (*1, *2), 3.0mW (*3), 3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1C *1 Output capacity COUT VOUT=GND 8pF *1:Not 100% TESTED Electrical characteristics (Unless otherwise specified, Ta = 40 ~ +85C, VCC = 1.8 ~ 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. 0.7x VCC input voltage 1 VIH1 V 1.8VCC5.5V VCC +0.3 0.3x input voltage 1 VIL1 -0.3 V 1.8VCC5.5V VCC output voltage 1 VOL1 0 0.4 V IOL=2.1mA(VCC=2.5V ~ 5.5V) output voltage 2 VOL2 0 0.2 IOL=150A(VCC=1.8V ~ 2.5V) V VCC = = output voltage 1 VOH1 VCC V IOH -0.4mA(VCC 2.5V ~ 5.5V) -0.5 VCC VCC V output voltage 2 VOH2 IOH=-100A(VCC=1.8V ~ 2.5V) -0.2 Input leak current ILI -1 1 A = VIN 0 ~ VCC Output leak current ILO -1 1 A = = VOUT 0 ~ VCC,CS VCC = = = VCC 1.8V,fSCK 2MHz,tE/W 5ms Byte write 1.0 mA ICC1 Page write Write status register VCC=2.5V,fSCK=5MHz,tE/W=5ms Current consumption at write Byte write 2.0 mA ICC2 action Page write Write status register = = = VCC 5.5V,fSCK 5MHz,tE/W 5ms Byte write ICC3 3.0 mA Page write Write status register = = VCC 2.5V,fSCK 5MHz Read ICC4m 1.5A Current consumption at read Read status register action VCC=5.5V,fSCK=5MHz Read 2.0 mA ICC5 Read status register = VCC 5.5V Standby current ISB 2 A = = = = = = CS HOLD WP VCC,SCK SI VCC or GND,SO=OPEN Radiation resistance design is not made. Block diagram VOLTAGE INSTRUCTION DECODE DETECTION CS CONTROL CLOCK WRITE HIGH VOLTAGE GENERATION SCK INHIBITION GENERATOR INSTRUCTION SI REGISTER STATUS REGISTER ADDRESS ADDRESS *1 7bit : BR25L010-W 7~13bit *1 HOLD 7~13bit *1 REGISTER DECODER 8bit : BR25L020-W 1K~64K 9bit : BR25L040-W EEPROM 10bit : BR25L080-W WP DATA READ/WRITE 11bit : BR25L160-W 8bit 8bit 12bit : BR25L320-W REGISTER AMP 13bit : BR25L640-W SO Fig.1 Block diagram www.rohm.com 2/16 2010.07 - Rev. B 2010 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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