BR93H76RFJ-2CE2 ROHM

BR93H76RFJ-2CE2 electronic component of ROHM
BR93H76RFJ-2CE2 ROHM
BR93H76RFJ-2CE2 EEPROM
BR93H76RFJ-2CE2  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BR93H76RFJ-2CE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR93H76RFJ-2CE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No. BR93H76RFJ-2CE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM (3-Wire) 2MHz 8Kbit 2.5-5.5V
Datasheet: BR93H76RFJ-2CE2 Datasheet (PDF)
Price (USD)
2500: USD 0.3673 ea
Line Total: USD 918.25 
Availability : 0
  
QtyUnit Price
2500$ 0.3673
5000$ 0.3558

Availability 0
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8341
10$ 0.7877
100$ 0.7723


Availability 0
Ship by Tue. 11 Nov to Thu. 13 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.3673
5000$ 0.3558

   
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We are delighted to provide the BR93H76RFJ-2CE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR93H76RFJ-2CE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM (3-wire) BR93H76-2C General Description Package (Typ) (Typ) (Max) BR93H76-2C is a serial EEPROM of serial 3-line MSOP8 2.90mm x 4.00mm x 0.90mm interface method. TSSOP-B8 3.00mm x 6.40mm x 1.20mm SOP8 5.00mm x 6.20mm x 1.71mm SOP-J8 4.90mm x 6.00mm x 1.65mm Features Conforming to Microwire BUS Withstands Electrostatic Voltage up to 6kV (HBM method typ Wide Temperature Range -40 to +125 Same package line-up and same pin configuration 2.5V to 5.5V Single Supply Voltage Operation Address Auto Increment Function at READ Operation Prevention of write mistake Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage TSSOP-B8 MSOP8 Self-timed programming cycle Program Condition Display by READY / BUSY Low Supply Current Write Operation (5V) : 0.8mA (Typ) Read Operation (5V) : 0.5mA (Typ) Standby Operation (5V) : 0.1A (Typ) Compact package MSOP8 / TSSOP-B8 / SOP8 / SOP-J8 High-Reliability using ROHM Original Double-Cell structure More than 50 years data retention (Ta125) More than 300,000 write cycles (Ta125) Data set to FFFFh on all addresses at shipment SOP-J8 SOP8 AEC-Q100 Qualified BR93H76-2C Package Type MSOP8 TSSOP-B8 SOP8 SOP-J8 Capacity Bit Format Product Name Supply Voltage RFVM RFVT RF RFJ 8Kbit 51216 BR93H76-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100040-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 16.Feb.2016 Rev.003DatasheetDatasheet BR93H76-2C Absolute Maximum Ratings (Ta=25) Parameter Symbol Limit Unit Supply Voltage V -0.3 to +6.5 V CC (1) 380 (MSOP8) (2) 410 (TSSOP-B8) Permissible Dissipation Pd mW (3) 560 (SOP8) (4) 560 (SOP-J8) Storage Temperature Range Tstg -65 to +150 Operating Temperature Range Topr -40 to +125 Input Voltage/Output Voltage -0.3 to VCC+0.3 V When using at Ta=25 or higher, 3.1mW(1), 3.3mW(2) , 4.5mW(3,4),to be reduced per 1. Memory Cell Characteristics (V =2.5V to 5.5V) CC Limit Parameter Unit Conditions Min Typ Max 1,000,000 - - Cycles Ta85 (5) Write Cycles 500,000 - - Cycles Ta105 300,000 - - Cycles Ta125 100 - - Years Ta25 (5) Data Retention 60 - - Years Ta105 50 - - Years Ta125 (5) Not 100% TESTED Recommended Operating Conditions Unit Parameter Symbol Limit Supply Voltage V 2.5 to 5.5 CC V Input Voltage V 0 to V IN CC www.rohm.com TSZ02201-0R1R0G100040-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/29 16.Feb.2016 Rev.003 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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