Product Information

BU9891GUL-WE2

BU9891GUL-WE2 electronic component of ROHM

Datasheet
EEPROM EEPROM Serial 4Kb

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.5375 ea
Line Total: USD 1612.5

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.9387

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.4248
6000 : USD 0.4176
9000 : USD 0.4081
24000 : USD 0.4022

     
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Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BU9891GUL-W (4Kbit) General Description BU9891GUL-W is serial EEPROM of serial 3-line interface method Features Package W(Typ.) x D(Typ.) x H(Max.) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) Actions available at high speed 2MHz clock (2.5V to 5.5V) Speed write available (write time 5ms max.) 1.7V to 5.5V single power source action Address auto increment function at read action Write mistake prevention function Write prohibition at power on Write prohibition by command code Write mistake prevention function at low voltage Program cycle auto delete and auto end function Program condition display by READY / BUSY Low current consumption At write action (at 5V): 1.2mA (Typ.) At read action (at 5V): 0.3mA (Typ.) At standby action (at 5V): 0.1A (Typ.) (CMOS input) Data retention for 40 years. Data rewrite up to 100,000times. Data at shipment all addresses FFFFh BU9891GUL-W Capacity Bit format Type Power source voltage Package type 4Kbit 25616 BU9891GUL-W 1.7V to 5.5V VCSP50L1 Absolute Maximum Ratings (Ta=25) Remarks Parameter Symbol Ratings Unit Impressed voltage VCC -0.3 to +6.5 V Permissible dissipation Pd 220 mW When using at Ta=25 or higher, 2.2mW to be reduced per 1 Storage temperature range Tstg -65 to +125 Action temperature range Topr -40 to +85 Terminal voltage -0.3 to VCC+0.3 V Memory cell characteristics (VCC=1.7V to 5.5V) Limit Parameter Unit Condition Min. Typ. Max. *1 Number of data rewrite times 100,000 - - Times Ta=25 *1 Data hold years 40 - - Years Ta=25 Shipment data all address FFFFh * 1:Not 100% TESTED Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100440-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/22 TSZ2211114001 3.SEP.2012 Rev.001DatasheetDatasheet BU9891GUL-W (4Kbit) Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage VCC 1.7 to 5.5 V Input voltage V 0 to VCC IN Electrical characteristics (Unless otherwise specified, VCC=1.7V to 5.5V, Ta=-40 to +85) Limits Parameter Symbol Unit Condition Min. Typ. Max. L input voltage V -0.3 - 0.2VCC V IL H input voltage V 0.8VCC - VCC+0.3 V IH L output voltage 1 V 0 - 0.4 V I =2.1mA, 4.0VVCC5.5V OL1 OL L output voltage 2 V 0 - 0.2 V I =100A OL2 OL H output voltage 1 V 2.4 - VCC V I =-0.4mA, 4.0VVCC5.5V OH1 OH H output voltage 2 V VCC-0.2 - VCC V I =-100A OH2 OH Input leak current I -1 - +1 A V =0V to VCC LI IN Output leak current I -1 - +1 A V =0V to VCC, CS=0V LO OUT I - - 3.0 mA f =2MHz, t =5ms (WRITE) CC1 SK E/W Current consumption at action I - - 1.5 mA f =2MHz (READ) CC2 SK Standby current I - - 2 A CS=0V, DO=OPEN SB www.rohm.com TSZ02201-0R2R0G100440-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/22 TSZ2211115001 3.SEP.2012 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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