DTC114EUB HZG Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified llOutline Parameter Value UMT3F V 50V CC I 100mA C(MAX.) R 10k 1 R 10k (SC-85) 2 llFeatures llInner circuit 1) Built-In Biasing Resistors, R = R = 10k 1 2 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA114EUB HZG. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC114EUB HZG UMT3F 2021 TL 180 8 3000 24 www.rohm.com 1/5 20150527 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. DTC114EUB HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 40 V IN I Output current 50 mA O *1 I Collector current 100 mA C(MAX) *2 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 10mA 3.0 - - I(on) O O V Output voltage I / I = 10mA / 0.5mA - 100 300 mV O(on) O I I V = 5V Input current - - 880 A I I I Output current V = 50V, V = 0V - - 500 nA O(off) CC I G V = 5V, I = 5mA DC current gain 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/5 20150527 - Rev.001