DTC124TUAT106 ROHM

DTC124TUAT106 electronic component of ROHM
DTC124TUAT106 ROHM
DTC124TUAT106 Bipolar Transistors - Pre-Biased
DTC124TUAT106 Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DTC124TUAT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC124TUAT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. DTC124TUAT106
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased NPN 50V 100MA
Datasheet: DTC124TUAT106 Datasheet (PDF)
Price (USD)
1: USD 0.3125 ea
Line Total: USD 0.31 
Availability : 7902
  
Ship by Wed. 15 Oct to Fri. 17 Oct
QtyUnit Price
1$ 0.3125
10$ 0.2812
500$ 0.1683
1000$ 0.1408
3000$ 0.0539
6000$ 0.0462
9000$ 0.0352
24000$ 0.0341

 DTC124TUAT106 More Buying Options & Price Grid(s)
Availability 7902
Ship by Wed. 15 Oct to Fri. 17 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3125
10$ 0.2812
500$ 0.1683
1000$ 0.1408
3000$ 0.0539
6000$ 0.0462
9000$ 0.0352
24000$ 0.0341

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC124TUAT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC124TUAT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTC124T series Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-323 V 50V CEO I 100mA C R 22k DTC124TM DTC124TUA (VMT3) (UMT3) llFeatures 1) Built-In Biasing Resistors, R = 22k 1 llApplication 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external INVERTER, INTERFACE, DRIVER input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA124T series llInner circuit DTC124TM DTC124TUA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTC124TM 1212 T2L 180 8 3000 05 (VMT3) SOT-323 DTC124TUA 2021 T106 180 8 3000 05 (UMT3) www.rohm.com 1/5 20160905 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. DTC124T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO *1 I Collector current 100 mA C DTC124TM 150 *2 P Power dissipation mW D DTC124TUA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 50V - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.5mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 15.4 22 28.6 k 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160905 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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RHM
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