DTD113ZUT106 ROHM

DTD113ZUT106 electronic component of ROHM
DTD113ZUT106 ROHM
DTD113ZUT106 Bipolar Transistors - Pre-Biased
DTD113ZUT106  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DTD113ZUT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTD113ZUT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. DTD113ZUT106
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased NPN 50V 500MA
Datasheet: DTD113ZUT106 Datasheet (PDF)
Price (USD)
5: USD 0.2834 ea
Line Total: USD 1.42 
Availability : 300
  
Ship by Mon. 17 Nov to Fri. 21 Nov
QtyUnit Price
5$ 0.2834
50$ 0.22
150$ 0.1446
500$ 0.1074
3000$ 0.0972
6000$ 0.0911

Availability 300
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2834
50$ 0.22
150$ 0.1446
500$ 0.1074
3000$ 0.0972
6000$ 0.0911


Availability 23429
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.76
10$ 0.4675
100$ 0.2852
500$ 0.2134
1000$ 0.1914
3000$ 0.1463


Availability 10101
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 461
Multiples : 1
QtyUnit Price
461$ 0.5644


Availability 11726
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 503
Multiples : 1
QtyUnit Price
503$ 0.5174
534$ 0.4875
1000$ 0.3393
3000$ 0.325
6000$ 0.2425
12000$ 0.215


Availability 2910
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 300
Multiples : 1
QtyUnit Price
300$ 0.9173

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTD113ZUT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTD113ZUT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTD113ZU 500mA/50V Digital transistor (with built-in resistors) Datasheet llOutline Parameter Value SOT-323 V 50V CC SC-70 I 500mA C R 1k 1 R 10k (UMT3) 2 llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 1k, R = 10k 1 2 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Type: DTB113ZU llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTD113ZU 2021 T106 180 8 3000 G21 (UMT3) www.rohm.com 1/5 20160303 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. DTD113ZU Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -5 to 10 V IN *1 I Collector current 500 mA C *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 1.5 - - I(on) O O V Output voltage I = 50mA, I = 2.5mA - 100 300 mV O(on) O I I Input current V = 5V - - 7.2 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I *3 G DC current gain V = 5V, I = 50mA 82 - - - I O O R Input resistance - 0.7 1 1.3 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = 10V, I = -50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 Pulsed www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160303 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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