X-On Electronics has gained recognition as a prominent supplier of DTD743EETL Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTD743EETL Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTD743EETL ROHM

DTD743EETL electronic component of ROHM
DTD743EETL ROHM
DTD743EETL Bipolar Transistors - Pre-Biased
DTD743EETL  Semiconductors

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See Product Specifications
Part No. DTD743EETL
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased TRANSISTOR
Datasheet: DTD743EETL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0913 ea
Line Total: USD 273.9 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0913
9000 : USD 0.0803
24000 : USD 0.0792
45000 : USD 0.0759
99000 : USD 0.0748

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Maximum Operating Frequency
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Output Voltage
Channel Mode
Cnhts
Hts Code
Maximum Dc Collector Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTD743EETL from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTD743EETL and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTD743E series Datasheet NPN 200mA 30V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT V 30V CC IN I IN 200mA C(MAX.) GND GND R 4.7k W 1 DTD743EM DTD743EE R 4.7k W (SC-105AA) SOT-416 (SC-75A) 2 lFeatures 1) Built-In Biasing Resistors, R = R = 4.7k W. lInner circuit 1 2 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types :DTB743E series 6) Lead Free/RoHS Compliant. l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) DTD743EM VMT3 1212 T2L 180 8 8,000 M23 DTD743EE EMT3 1616 TL 180 8 3,000 M23 www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.C 1/6Data Sheet DTD743E series lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Supply voltage 30 V CC V V Input voltage -10 to +20 IN *1 200 mA Collector current I C(MAX.) *2 150 mW Power dissipation P D T 150 C Junction temperature j T C Range of storage temperature -55 to +150 stg lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100mA - - 0.5 I(off) CC O Input voltage V V = 0.3V, I = 20mA V 2.5 - - O O I(on) V I / I = 50mA / 2.5mA Output voltage - 0.07 0.3 V O I O(on) I V = 5V Input current - - 1.4 mA I I I V = 30V, V = 0V Output current - - 0.5 mA O(off) CC I V = 2V, I = 100mA DC current gain G 115 - - - O O I Input resistance R - 3.29 4.7 6.11 k W 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = 10V, I = -5mA, *1 CE E Transition frequency f - 260 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.C 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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