EM6J1T2R ROHM

EM6J1T2R electronic component of ROHM
EM6J1T2R ROHM
EM6J1T2R MOSFETs
EM6J1T2R  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of EM6J1T2R MOSFETs across the USA, India, Europe, Australia, and various other global locations. EM6J1T2R MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. EM6J1T2R
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET FET Dual Pch -20V -200mA EMT6
Datasheet: EM6J1T2R Datasheet (PDF)
Price (USD)
2977: USD 0.0874 ea
Line Total: USD 260.19 
Availability : 3986
  
Ship by Tue. 19 Aug to Mon. 25 Aug
QtyUnit Price
2977$ 0.0874

Availability 134000
Ship by Fri. 15 Aug to Tue. 19 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7287
10$ 0.4475
100$ 0.2645
500$ 0.2013
1000$ 0.1672
2500$ 0.1661
5000$ 0.1364
8000$ 0.1353


Availability 7760
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 813
Multiples : 1
QtyUnit Price
813$ 0.3199
844$ 0.3084
1000$ 0.2984
2500$ 0.2784
5000$ 0.2709


Availability 7706
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 760
Multiples : 1
QtyUnit Price
760$ 0.3423
789$ 0.3299
1000$ 0.3192
2500$ 0.2979
5000$ 0.2899


Availability 3986
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 2977
Multiples : 1
QtyUnit Price
2977$ 0.0874


Availability 7372
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 760
Multiples : 1
QtyUnit Price
760$ 0.3423
789$ 0.3299
1000$ 0.3192
2500$ 0.2979
5000$ 0.2899

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Factory Pack Quantity :
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EM6J1T2R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EM6J1T2R and other electronic components in the MOSFETs category and beyond.

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EM6J1 Datasheet Pch+Pch -20V -200mA Small Signal MOSFET llOutline SOT-563 V -20V DSS SC-107C R (Max.) 1.2 DS(on) EMT6 I 200mA D P 150mW D llFeatures llInner circuit 1) Two Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Ultra low voltage drive(1.2V drive). 4) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 200 mA D *1 I Pulsed drain current 800 mA DP Gate - Source voltage V 10 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160624 - Rev.001 EM6J1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 833 *2 Thermal resistance, junction - ambient R /W thJA element - - 1042 llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -100A -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -200mA - 0.8 1.2 GS D V = -2.5V, I = -100mA - 1.0 1.5 GS D Static drain - source *3 R V = -1.8V, I = -100mA - 1.3 2.2 DS(on) GS D on - state resistance V = -1.5V, I = -40mA - 1.6 3.5 GS D V = -1.2V, I = -10mA - 2.4 9.6 GS D Forward Transfer *3 Y V = -10V, I = -200mA 200 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160624 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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