X-On Electronics has gained recognition as a prominent supplier of EM6J1T2R mosfet across the USA, India, Europe, Australia, and various other global locations. EM6J1T2R mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

EM6J1T2R

EM6J1T2R electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.EM6J1T2R
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET FET Dual Pch -20V -200mA EMT6
Datasheet: EM6J1T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

243: USD 0.1674 ea
Line Total: USD 40.68

Availability - 4180
Ships to you between
Fri. 31 May to Thu. 06 Jun
MOQ: 243  Multiples: 1
Pack Size: 1
Availability Price Quantity
231660 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.3485
100 : USD 0.2449
500 : USD 0.1978
1000 : USD 0.1507
8000 : USD 0.1368
24000 : USD 0.1357
48000 : USD 0.1323

4180 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 243
Multiples : 1
243 : USD 0.1674
500 : USD 0.1434
1000 : USD 0.1358
2000 : USD 0.1262

7566 - WHS 3


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 142
Multiples : 1
142 : USD 0.7493
250 : USD 0.7193
500 : USD 0.6933
1000 : USD 0.6707
2500 : USD 0.6509
5000 : USD 0.6334

7760 - WHS 4


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 142
Multiples : 1
142 : USD 0.7493
250 : USD 0.7193
500 : USD 0.6933
1000 : USD 0.6707
2500 : USD 0.6509
5000 : USD 0.6334

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Factory Pack Quantity :
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the EM6J1T2R MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the EM6J1T2R MOSFET.

EM6J1 Datasheet Pch+Pch -20V -200mA Small Signal MOSFET llOutline SOT-563 V -20V DSS SC-107C R (Max.) 1.2 DS(on) EMT6 I 200mA D P 150mW D llFeatures llInner circuit 1) Two Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Ultra low voltage drive(1.2V drive). 4) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 200 mA D *1 I Pulsed drain current 800 mA DP Gate - Source voltage V 10 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160624 - Rev.001 EM6J1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 833 *2 Thermal resistance, junction - ambient R /W thJA element - - 1042 llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -100A -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -200mA - 0.8 1.2 GS D V = -2.5V, I = -100mA - 1.0 1.5 GS D Static drain - source *3 R V = -1.8V, I = -100mA - 1.3 2.2 DS(on) GS D on - state resistance V = -1.5V, I = -40mA - 1.6 3.5 GS D V = -1.2V, I = -10mA - 2.4 9.6 GS D Forward Transfer *3 Y V = -10V, I = -200mA 200 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160624 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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