EMB10FHAEMB10 / UMB10N / UMB10NFHA / IMB10A / IMB10AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) V -50V (4) CC (4) (1) (1) (2) (2) I -100mA C(MAX.) (3) (3) R 2.2k W 1 EMB10 EMB10FHA UMB10NFHAUMB10N R (SC-107C) 47k W SOT-363 (SC-88) 2 SMT6 (4) (5) lFeatures (6) (3) 1) Built-In Biasing Resistors. (2) (1) 2) Two DTA123J chips in one package. 3) Built-in bias resistors enable the configuration of IMB10AFRAIMB10A SOT-457 (SC-74) an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors l with complete isolation to allow negative biasing Inner circuit of the input. They also have the advantage of EMB10 / UMB10N EMB10FHA / UMB10NFHA IMB10AFRAIMB10A completely eliminating parasitic effects. OUT IN GND OUT IN GND 5) Only the on/off conditions need to be set for (6) (5) (4) (4) (5) (6) operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. lApplication (1) (2) (3) (3) (2) (1) GND IN OUT Inverter circuit, Interface circuit, Driver circuit GND IN OUT lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMB10 EMT6 1616 T2R 180 8 8,000 B10 EMB10FHA UMB10N UMT6 2021 TR 180 8 3,000 B10 UMB10NFHA IMB10A SMT6 2928 T108 180 8 3,000 B10 IMB10AFRA www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.D 1/7EMB10FHA / UMB10NFHA / IMB10AFRA Data Sheet EMB10 / UMB10N / IMB10A lAbsolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -12 to +5 V IN I mA Output current -100 O *1 -100 mA Collector current I C(MAX.) *3 EMEMB10FB10HA / /U UMB10NFMB10NHA mW Power dissipation 150 (Total) *2 P D *4 IMB10A mW IMB10AFRA 300 (Total) T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg lElectrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit V V = -5V, I = -100mA - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -5mA - - -1.1 I(on) O O Output voltage V I / I = -5mA / -0.25mA - V -0.1 -0.3 O(on) O I I V = -5V Input current - - -3.6 mA I I I V = -50V, V = 0V Output current - - -0.5 mA O(off) CC I G V = -5V, I = -10mA DC current gain 80 - - - I O O Input resistance R - 1.54 2.2 2.86 k W 1 Resistance ratio R /R - 17 21 26 - 2 1 V = -10V, I = 5mA, *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.D 2/7