EMB4T2R ROHM

EMB4 / UMB4N General purpose (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V -50V CEO I -100mA C R 10k 1 EMB4 UMB4N (EMT6) (UMT6) llFeatures llInner circuit 1)Two DTA114T chips in a EMT or UMT package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB4 1616 T2R 180 8 8000 B4 (EMT6) SOT-363 UMB4N 2021 TN 180 8 3000 B4 (UMT6) www.rohm.com 1/5 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMB4 / UMB4N Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -5 V EBO I Collector current -100 mA C *1*2 P EMB4 150 D Power dissipation mW/Total *1*2 P UMB4N 150 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -5 - - V EBO E Collector cut-off current I V = -50V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -10mA, I = -1mA - - -300 mV CE(sat) C B h DC current gain V = -5V, I = -1mA 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = -10V, I = 5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 Characteristics of built-in transistor. www.rohm.com 2/5 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.