EMD59T2R ROHM

EMD59 Datasheet Complex Digital Transistors (Bias Resistor Built-in Transistors) <For DTr1(NPN)> llOutline Parameter Value SOT-563 V 50V CC SC-107C I 100mA C(MAX.) R 10k 1 R EMT6 47k 2 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) R 10k 1 R 47k 2 llFeatures llInner circuit 1) DTA014Y and DTC014Y chip in a EMT package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication SWITCHING CIRCUIT, INVERTER CIRCUIT, INTERFACE CIRCUIT llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD59 1616 T2R 180 8 8000 D59 (EMT6) www.rohm.com 1/7 20160905 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.EMD59 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltage V 50 -50 V CC V Input voltage 40 to -6 -40 to 6 V IN I Output current 70 -70 mA O *1 I Collector current 100 -100 mA C(MAX) *2*3 P Power dissipation 150 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 5mA 1.7 - - I(on) O O V I = 5mA, I = 0.5mA Output voltage - 50 150 mV O(on) O I I V = 5V Input current - - 880 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G V = 10V, I = 5mA DC current gain 80 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -5mA -1.7 - - I(on) O O V Output voltage I = -5mA, I = -0.5mA - -70 -150 mV O(on) O I I Input current V = -5V - - -880 A I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G V = -10V, I = -5mA DC current gain 80 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20160905 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.