EMG5T2R ROHM

EMG5T2R electronic component of ROHM
EMG5T2R ROHM
EMG5T2R Bipolar Transistors - Pre-Biased
EMG5T2R  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of EMG5T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMG5T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. EMG5T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 70MA
Datasheet: EMG5T2R Datasheet (PDF)
Price (USD)
1264: USD 0.2058 ea
Line Total: USD 260.13 
Availability : 7760
  
Ship by Fri. 28 Nov to Thu. 04 Dec
QtyUnit Price
1264$ 0.2058
1311$ 0.1984
1356$ 0.1919
2500$ 0.1791
5000$ 0.1743

Availability 19
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.0716
50$ 0.0698
150$ 0.0686
500$ 0.0505


Availability 7663
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 687
Multiples : 1
QtyUnit Price
687$ 0.4095
1213$ 0.2145
2000$ 0.1989


Availability 7760
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 1264
Multiples : 1
QtyUnit Price
1264$ 0.2058
1311$ 0.1984
1356$ 0.1919
2500$ 0.1791
5000$ 0.1743


Availability 7760
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 1415
Multiples : 1
QtyUnit Price
1415$ 0.1838


Availability 6771
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 1415
Multiples : 1
QtyUnit Price
1415$ 0.1838

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Package Case
Brand
Power Dissipation
Dc Collectorbase Gain Hfe Min
Factory Pack Quantity :
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMG5T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMG5T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMG5 / UMG5N Emitter common (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CC I 100mA C(MAX.) R 10k 1 EMG5 UMG5N R (EMT5) (UMT5) 47k 2 llFeatures llInner circuit 1)Two DTC114Y chips in a EMT or UMT package 2)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG5 1616 T2R 180 8 8000 G5 (EMT5) SOT-353 UMG5N 2021 TR 180 8 3000 G5 (UMT5) www.rohm.com 1/6 20151201 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG5 / UMG5N Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -6 to 40 V IN I Output current 70 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMG5 150 D Power dissipation mW/Total *2*3 P UMG5N 150 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 1mA 1.4 - - I(on) O O V I = 5mA, I = 0.25mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 880 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G V = 5V, I = 5mA DC current gain 68 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/6 20151201 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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