EMH25 Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 Parameter Tr1 and Tr2 (6) V 50V (5) CC (4) (1) I 100mA C(MAX.) (2) (3) R 4.7k W 1 EMH25 R 47k W (SC-107C) 2 lFeatures lInner circuit 1) Built-In Biasing Resistors. 2) Two DTC143Z chips in one package. OUT IN GND (6) (5) (4) 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of (1) (2) (3) GND IN OUT completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMH25 EMT6 1616 T2R 180 8 8,000 H25 www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/5Data Sheet EMH25 lAbsolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V 50 V Supply voltage CC V -5 to +30 V Input voltage IN I Output current 100 mA O *1 Collector current I 100 mA C(MAX.) *2 *3 Power dissipation P mW 150 (Total) D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg lElectrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100mA - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 5mA 1.3 - - I(on) O O I / I = 5mA / 0.25mA Output voltage V - 0.1 0.3 V O I O(on) V = 5V Input current I - - 1.8 mA I I I V = 50V, V = 0V Output current - - 0.5 mA CC I O(off) G V = 5V, I = 10mA DC current gain 80 - - - I O O R - Input resistance 3.29 4.7 6.11 k W 1 Resistance ratio R /R - 8 10 12 - 2 1 V = 10V, I = -5mA, *1 CE E Transition frequency - 250 - MHz f T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/5