X-On Electronics has gained recognition as a prominent supplier of IMH3AT110 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. IMH3AT110 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

IMH3AT110 ROHM

IMH3AT110 electronic component of ROHM
IMH3AT110 ROHM
IMH3AT110 Bipolar Transistors - Pre-Biased
IMH3AT110  Semiconductors

Images are for reference only
See Product Specifications
Part No. IMH3AT110
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL NPN 50V 100MA SOT-457
Datasheet: IMH3AT110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0687 ea
Line Total: USD 412.2 
Availability - 11640
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
11640
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.0687
9000 : USD 0.0668
15000 : USD 0.0634
30000 : USD 0.0617

5761
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4537
10 : USD 0.2825
100 : USD 0.1716
500 : USD 0.1188
1000 : USD 0.1023
3000 : USD 0.0957
6000 : USD 0.0836
9000 : USD 0.0748
24000 : USD 0.0704

2900
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 1337
Multiples : 1
1337 : USD 0.1945
1383 : USD 0.1881
2500 : USD 0.1755

2813
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 1667
Multiples : 1
1667 : USD 0.156
1981 : USD 0.1313
2119 : USD 0.1227

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMH3AT110 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMH3AT110 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMH3 / UMH3N / IMH3A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V 50V CEO I 100mA C R 4.7k 1 EMH3 UMH3N (EMT6) (UMT6) SOT-457 llFeatures 1)Two DTC143T chips in a EMT or UMT or SMT package. IMH3A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMH3 / UMH3N IMH3A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMH3 1616 T2R 180 8 8000 H3 (EMT6) SOT-363 UMH3N 2021 TN 180 8 3000 H3 (UMT6) SOT-457 IMH3A 2928 T110 180 8 3000 H3 (SMT6) www.rohm.com 1/6 20151015 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMH3 / UMH3N / IMH3A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMH3 150 D *1*2 P Power dissipation UMH3N 150 mW/Total D *1*3 IMH3A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.25mA - - 300 mV C B CE(sat) h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151015 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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