MCR03EZPFX2204 ROHM

MCR03EZPFX2204 electronic component of ROHM Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MCR03EZPFX2204 across the USA, India, Europe, Australia, and various other global locations. MCR03EZPFX2204 are a product manufactured by ROHM. We provide cost-effective solutions for MCR03EZPFX2204, ensuring timely deliveries around the world.

Part No. MCR03EZPFX2204
Manufacturer: ROHM
Category: Unclassified
Description: MCR03EZPFX2204
Dual N-type MOSFET with low on-resistance, built-in diode, and maximum voltage of 20V.
Datasheet:
Price (USD)
5000: USD 0.0055 ea
Line Total: USD 27.5 
Availability : 0
  
QtyUnit Price
5000$ 0.0055
40000$ 0.0049
145000$ 0.0044

Availability 0
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.0055
40000$ 0.0049
145000$ 0.0044

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCR03EZPFX2204 from our ROHM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCR03EZPFX2204 and other electronic components in the ROHM manufacturer and beyond.

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The MCR03EZPFX2204 is a surface-mount device from ROHM Semiconductor. It is a N-channel FET with a low on-resistance of 2204mO. The FET has a single gate and can be used for switching, level translation, and current limiting applications where low on-resistance is required. The device is rated with a maximum drain source voltage of 30V and a maximum gate-source voltage of 8V, with a maximum continuous drain current of 12A. It is housed in an ultra-small 3.3mm × 3.3mm U-DFN1212-6 package.

Tariff Desc

8533.21.00
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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