QS8J4TR ROHM

QS8J4TR electronic component of ROHM
QS8J4TR ROHM
QS8J4TR MOSFETs
QS8J4TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QS8J4TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS8J4TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.QS8J4TR
Manufacturer:ROHM
Category:MOSFETs
Description:ROHM Semiconductor MOSFET TRANS MOSFET PCH 30V 4A 8PIN
Datasheet:QS8J4TR Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 1.85 ea
Line Total: USD 1.85 
Availability : 2214
  
Ship by Mon. 22 Jun to Wed. 24 Jun
QtyUnit Price
1$ 1.85
10$ 1.1352
100$ 0.7073
500$ 0.5731
1000$ 0.5313
3000$ 0.4796
6000$ 0.473
  

Availability2214
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.85
10$ 1.1352
100$ 0.7073
500$ 0.5731
1000$ 0.5313
3000$ 0.4796
6000$ 0.473


Availability1416
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 170
Multiples : 1
QtyUnit Price
170$ 1.5344
246$ 1.0573
329$ 0.7911
500$ 0.6651
1000$ 0.5725
3000$ 0.5288
6000$ 0.4962
9000$ 0.4852


Availability2861
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 151
Multiples : 1
QtyUnit Price
151$ 2.1403


Availability1422
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 302
Multiples : 1
QtyUnit Price
302$ 0.8613

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Operating Temperature Classification
Operating Temp Range
Polarity
Continuous Drain Current
Mounting
Gate-Source Voltage Max
Number Of Elements
Package Type
Rad Hardened
Drain-Source On-Volt
Type
Pin Count
Power Dissipation
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the QS8J4TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8J4TR and other electronic components in the MOSFETs category and beyond.

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QS8J4 Datasheet -30V Pch + Pch Small Signal MOSFET llOutline V -30V DSS R (Max.) 56m DS(on) TSMT8 I 4A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J04 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 4 A D *1 I Pulsed drain current 16 A DP Gate - Source voltage V 20 V GSS *2 P 1.5 D Power dissipation (total) W *3 P 1.1 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20180921 - Rev.003 2018 ROHM Co., Ltd. All rights reserved. QS8J4 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 113 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T j referenced to 25 V = -10V, I = -4A - 40 56 GS D Static drain - source *4 R V = -4.5V, I = -2A - 55 77 m DS(on) GS D on - state resistance V = -4.0V, I = -2A - 60 84 GS D R Gate resistance f = 1MHz, open drain - 19 - G Forward Transfer *4 Y V = -10V, I = -4A 3 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2/11 20180921 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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