X-On Electronics has gained recognition as a prominent supplier of R6009ENX mosfet across the USA, India, Europe, Australia, and various other global locations. R6009ENX mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

R6009ENX ROHM

R6009ENX electronic component of ROHM
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See Product Specifications
Part No.R6009ENX
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET
Datasheet: R6009ENX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.104 ea
Line Total: USD 4.1

Availability - 463
Ships to you between
Fri. 14 Jun to Tue. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
449 - WHS 1


Ships to you between Fri. 14 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 3.358
10 : USD 2.852
25 : USD 2.737
100 : USD 2.3805
250 : USD 2.2885
500 : USD 2.1275
1000 : USD 1.909
2500 : USD 1.8975
5000 : USD 1.8285

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Mounting
Operating Temp Range
Pin Count
Package Type
Number Of Elements
Continuous Drain Current
Drain-Source On-Volt
Operating Temperature Classification
Gate-Source Voltage Max
Power Dissipation
Rad Hardened
Polarity
Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R6009ENX from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6009ENX and other electronic components in the MOSFET category and beyond.

R6009ENX Datasheet Nch 600V 9A Power MOSFET llOutline V 600V DSS R (Max.) 0.535 DS(on) TO-220FM I 9A D P 48W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llPackaging specifications Code Packing C7 G Tube llApplication C7 Tube* Switching - (Blank) Bulk* *Package dimensions are different llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 I Continuous drain current 9 A D *2 Pulsed drain current I 18 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, repetitive 1.4 A AS *3 Avalanche energy, single pulse E 153 mJ AS *3 E Avalanche energy, repetitive 0.23 mJ AS Power dissipation (T = 25C) P 48 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2019 ROHM Co., Ltd. All rights reserved. 20200121 - Rev.003 R6009ENX Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - case - - 2.6 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 2.8A GS D Static drain - source *5 R T = 25C - 0.500 0.535 DS(on) j on - state resistance T = 125C - 1.00 - j R Gate resistance f =1MHz, open drain - 9.6 - G www.rohm.com 2/12 20200121 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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