R6009ENX ROHM

R6009ENX electronic component of ROHM
R6009ENX ROHM
R6009ENX MOSFETs
R6009ENX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of R6009ENX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6009ENX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. R6009ENX
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: R6009ENX Datasheet (PDF)
Price (USD)
1: USD 4.7875 ea
Line Total: USD 4.79 
Availability : 439
  
Ship by Thu. 07 Aug to Mon. 11 Aug
QtyUnit Price
1$ 4.7875
10$ 3.0015
100$ 2.277
500$ 1.98
1000$ 1.837
2500$ 1.826

Availability 439
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.7875
10$ 3.0015
100$ 2.277
500$ 1.98
1000$ 1.837
2500$ 1.826

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Mounting
Operating Temp Range
Pin Count
Package Type
Number Of Elements
Continuous Drain Current
Drain-Source On-Volt
Operating Temperature Classification
Gate-Source Voltage Max
Power Dissipation
Rad Hardened
Polarity
Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R6009ENX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6009ENX and other electronic components in the MOSFETs category and beyond.

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R6009ENX Datasheet Nch 600V 9A Power MOSFET llOutline V 600V DSS R (Max.) 0.535 DS(on) TO-220FM I 9A D P 48W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llPackaging specifications Code Packing C7 G Tube llApplication C7 Tube* Switching - (Blank) Bulk* *Package dimensions are different llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 I Continuous drain current 9 A D *2 Pulsed drain current I 18 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, repetitive 1.4 A AS *3 Avalanche energy, single pulse E 153 mJ AS *3 E Avalanche energy, repetitive 0.23 mJ AS Power dissipation (T = 25C) P 48 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2019 ROHM Co., Ltd. All rights reserved. 20200121 - Rev.003 R6009ENX Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - case - - 2.6 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 2.8A GS D Static drain - source *5 R T = 25C - 0.500 0.535 DS(on) j on - state resistance T = 125C - 1.00 - j R Gate resistance f =1MHz, open drain - 9.6 - G www.rohm.com 2/12 20200121 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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