Data Sheet 10V Drive Nch MOSFET R6010ANX Structure Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Fast switching speed. 0.8 3) Gate-source voltage (V ) guaranteed to be 30V. GSS (1) Gate 2.54 2.54 0.75 2.6 4) Drive circuits can be simple. (2) Drain (1) (2)(3) (3) Source 5) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering unit (pieces) 500 R6010ANX (1) Gate (1) (2) (3) (2) Drain (3) Source 1 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS Continuous I *3 10 A D Drain current Pulsed *1 I A DP 40 Continuous I *3 10 A Source current S (Body Diode) Pulsed I *1 A 40 SP Avalanche current I *2 5A AS *2 Avalanche energy E 6.5 mJ AS *4 Power dissipation P 50 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, Starting, T =25C DD G ch *3 Limited only by maximum temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit Channel to Case Rth (ch-c) 2.5 C / W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/6 Not Recommended for New Designs 14.0 15.0 12.0 2.5 8.0Data Sheet R6010ANX Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V = 30V, V =0V GSS GS DS Drain-source breakdown voltage V 600 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 100 AV =600V, V =0V DSS DS GS Gate threshold voltage V 2.5 - 4.5 V V =10V, I =1mA GS (th) DS D Static drain-source on-state * R I =5A, V =10V - 0.43 0.56 DS (on) D GS resistance * Forward transfer admittance l Y l 3.0 - - S I =5A, V =10V fs D DS Input capacitance C - 1050 - pF V =25V iss DS Output capacitance C - 720 - pF V =0V oss GS Reverse transfer capacitance C - 35 - pF f=1MHz rss Turn-on delay time t - 25 - ns V 300V, I =5A d(on) * DD D Rise time t - 30 - ns V =10V r * GS Turn-off delay time t - 70 - ns R =60 d(off) L * Fall time t - 30 - ns R =10 f * G Total gate charge Q - 25 - nC V 300V, I =10A g * DD D Gate-source charge Q -5 - nCV =10V * gs GS Gate-drain charge Q -12 - nC gd * *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =10A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Not Recommended for New Designs