Product Information

R6024ENX

R6024ENX electronic component of ROHM

Datasheet
Trans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-220FM Bulk

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.7795 ea
Line Total: USD 3.78

354 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
354 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

R6024ENX
ROHM

1 : USD 3.7795
10 : USD 3.212
25 : USD 3.1153
100 : USD 2.7048
250 : USD 2.572
500 : USD 2.4029
1000 : USD 2.1494
5000 : USD 2.0649

20 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 20
Multiples : 1

Stock Image

R6024ENX
ROHM

20 : USD 2.1499

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Operating Temperature Classification
Operating Temp Range
Pin Count
Drain-Source On-Volt
Number Of Elements
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Rad Hardened
Polarity
Type
Mounting
Package Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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R6024ENX Datasheet Nch 600V 24A Power MOSFET llOutline V 600V DSS R (Max.) 0.165 DS(on) TO-220FM I 24A D P 74W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llPackaging specifications Code Packing C7 G Tube llApplication C7 Tube* Switching - (Blank) Bulk* *Package dimensions are different llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 I Continuous drain current 24 A D *2 Pulsed drain current I 72 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, repetitive 4.1 A AS *3 Avalanche energy, single pulse E 497 mJ AS *3 E Avalanche energy, repetitive 0.75 mJ AS Power dissipation (T = 25C) P 74 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2019 ROHM Co., Ltd. All rights reserved. 20200203 - Rev.003 R6024ENX Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - case - - 1.7 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 11.3A GS D Static drain - source *5 R T = 25C - 0.150 0.165 DS(on) j on - state resistance T = 125C - 0.320 - j R Gate resistance f =1MHz, open drain - 6.1 - G www.rohm.com 2/12 20200203 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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ROHM Semiconductor

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