R6025FNZ1 Nch 600V 25A Power MOSFET Datasheet Outline V 600V DSS TO-247 R (Max.) 0.18 DS(on) I 25A D (3) P 446W (2) D (1) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. 1 (2) Drain 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS 4) Drive circuits can be simple. 1 BODY DIODE (1) (2) (3) 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant Packaging specifications Packaging Tube Reel size (mm) - Tape width (mm) - Application Type Basic ordering unit (pcs) 450 Switching Power Supply Taping code C9 Marking R6025FNZ1 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 25 A c D Continuous drain current *1 T = 100C I 12 A c D *2 Pulsed drain current A I 100 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 42.1 mJ E AS *4 Avalanche energy, repetitive E 9.7 mJ AR *3 Avalanche current I 12.5 A AR Power dissipation (T = 25C) P 446 W c D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02- Rev.B 1/13 ObsoleteData Sheet R6025FNZ1 Absolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 25A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125 C j Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 0.28 C/W thJC Thermal resistance, junction - ambient R - -30 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Symbol Conditions Unit Parameter Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 12.5A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS A Zero gate voltage I T = 25C - 0.1 100 DSS j drain current T = 125C - - 10 mA j Gate - Source leakage current I V = 30V, V = 0V-n- A 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3-V5 GS (th) DS D V = 10V, I = 12.5A GS D Static drain - source *6 T = 25C R - 0.14 0.18 j DS(on) on - state resistance T = 125C - 0.28 - j R Gate input resistance f = 1MHz, open drain - 3.3 - G www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02- Rev.B 2/13 Obsolete