R6030JNZ4C13 ROHM

R6030JNZ4 Datasheet Nch 600V 30A Power MOSFET llOutline TO-247G V 600V DSS R (Max.) 0.143 DS(on) I 30A D P 370W D llFeatures llInner circuit 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching applications Packing Tube Packing code C13 Marking R6030JNZ4 Basic ordering unit (pcs) 600 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 30 A c D *2 I Pulsed drain current 90 A DP V Gate - Source voltage 30 V GSS *3 I Avalanche current, single pulse 8.1 A AS *3 E Avalanche energy, single pulse 717 mJ AS Power dissipation (T = 25C) P 370 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20181201 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. R6030JNZ4 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 0.34 /W thJC R Thermal resistance, junction - ambient - - 30 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I - - 100 A DSS drain current T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 5.5mA 5.0 6.0 7.0 V GS(th) DS GS D V = 15V, I = 15A GS D Static drain - source *5 R - 0.110 0.143 DS(on) on - state resistance T = 25C j Gate resistance R f = 1MHz, open drain - 1.1 - G www.rohm.com 2/11 20181201 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.