Product Information

RB095BGE-30TL

RB095BGE-30TL electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 30V Vr; 6A Io TO-252 SBD
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2339 ea
Line Total: USD 1.23

2008 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1792 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 1.0879
10 : USD 0.9039
100 : USD 0.7222
500 : USD 0.6302
1000 : USD 0.5267
2500 : USD 0.5048
5000 : USD 0.5048
10000 : USD 0.4842

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Hts Code
LoadingGif

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Additional Infomation About Product

RB095BGE-30 Schottky Barrier Diode Data sheet Outline V 30 V R I 6 A o I 50 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Low V F Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 16 Structure Quantity(pcs) 2500 Silicon epitaxial planar Taping Code TL Marking B095BM30 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 35 V RM Reverse voltage V Reverse direct voltage 30 V R 60Hz half sin waveformresistive load Average rectified forward current I 6 A o I /2 per diodeT =134Max. o c 60Hz half sin waveform Peak forward surge current I 50 A FSM non-repetitiveper diodeT =25 a (1) Junction temperature T - 150 j Storage temperature T - -40 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j JA Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.002RB095BGE-30 Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =3A - - 0.425 V F F (1) I V =30V Reverse current - - 0.2 mA R R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 4.0 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 2.2 /W (1) (3) R Thermal Resistance (Junction to ambient) - - 75 /W JA Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.002

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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