RB228T100 ROHM

Schottky Barrier Diode RB228T100 Data Sheet lApplications lDimensions (Unit : mm) lStructure Switching power supply Cathode 0.3 4.5 0.1 (2) 0.3 0.2 10.0 0.1 2.8 0.1 f3.20.2 lFeatures 1) Cathode common dual type 2) Low I R (1) (3) 1 3) High reliability Anode Anode 1.2 1.3 2.60.5 0.8 lConstruction 0.1 0.75 0.05 Silicon epitaxial planar type 2.45 0.5 2.45 0.5 (1) (2) (3) ROHM : TO220FN 1 : Manufacture date lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 110 V RM Reverse voltage V Direct reverse voltage 100 V R 60Hz half sin wave, resistive load, Average forward rectified current I 30 A o I /2 per diode, T =83C Max. O c 60Hz half sin wave, Non-repetitive at Non-repetitive forward current surge peak I 100 A FSM T =25C , 1cycle, per diode a T Operating junction temperature - 150 C j T - Storage temperature -40 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =5A Forward voltage V - - 0.87 V F F V =100V Reverse current I - - 5 R mA R R Junction to case Thermal resistance - - 2.00 C/W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.C 1/4 Not Recommended for New Designs 5.0 0.2 8.00.2 14.00.5 12.00.2 0.4 15.0 0.2 Data Sheet RB228T100 1000000 100 Ta=125 C Ta=150 C Ta=75 C 100000 10 Ta=125 C 10000 Ta=75 C 1 Ta=150 C 1000 Ta=25 C 0.1 100 Ta=25 C Ta=-25 C 0.01 10 Ta=-25 C 0.001 1 100 200 300 400 500 600 700 800 900 0 10 20 30 40 50 60 70 80 90 100 110 REVERSE VOLTAGEV (V) FORWARD VOLTAGE V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1000 770 f=1MHz Ta=25 C I =5A F 760 n=30pcs 750 100 AVE:731.5mV 740 730 10 720 0 10 20 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 400 600 Ta=25 C 590 Ta=25 C V =100V R f=1MHz n=30pcs 580 V =0V R 300 n=10pcs 570 560 AVE:151nA 200 550 540 530 AVE:514.4pF 100 520 510 500 0 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.C 2/4 Not Recommended for New Designs REVERSE CURRENT:I (nA) R CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R