RB400VA-50TR ROHM

Data Sheet Schottky Barrier Diode RB400VA-50 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 1.1 0.170.1 0.05 1.30.05 Features 1) Small mold type. (TUMD2) 2) Low V , Low I . F R 3) High reliability. TUMD2 Construction Silicon epitaxial planer Structure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day Taping specifications (Unit : mm) 1.550.1 0.250.05 4.00.1 2.00.05 0 4.00.1 1.00.2 1.430.05 0 0.90.08 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 50 V RM Reverse voltage (DC) V 40 V R Average rectified forward current 0.5 Io A Forward current surge peak (60Hz / 1cyc) I 3 A FSM Junction temperature 125 Tj C Storage temperature Tstg 40 to 125 C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V 1 - - 0.55 V I =500mA F F I 1 -- 30 AV =10V R R Reverse current I 2 -- 50 AV =30V R R Ct1 - 125 - pF V =0V , f=1MHz R Capacitance between terminals Ct2 - 20 - pF V =10V , f=1MHz R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5RB400VA-50 Data Sheet 1000 10000 1000 Ta=125 f=1MHz 1000 Ta=75 100 Ta=125 100 Ta=75 100 Ta=25 10 10 Ta=25 Ta=-25 1 10 1 Ta=-25 0.1 0.1 0.01 1 0 200 400 600 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS 10 10 520 Ta=25 Ta=25 Ta=25 9 9 IF=0.5A VR=10V VR=35V 8 510 n=30pcs n=30pcs 8 n=30pcs 7 7 6 500 6 5 5 4 490 4 AVE:1.562uA AVE:0.510uA 3 3 2 2 480 1 1 AVE:495.8mV 470 0 0 IR DISPERSION MAP IR DISPERSION MAP VF DISPERSION MAP 200 30 25 Ta=25 190 Ta=25 24 f=1MHz 1cyc f=1MHz Ifsm 180 23 VR=0V VR=10V n=10pcs 170 n=10pcs 22 8.3ms 20 160 21 150 20 140 19 10 AVE:117.5pF 130 18 17 120 AVE:20.66pF 16 AVE:5.30A 110 15 0 100 Ct DISPERSION MAP Ct DISPERSION MAP IFSM DISRESION MAP 20 10 10 Ta=25 IF=0.5A Ifsm Ifsm IR=1A 8 8 15 t Irr=0.25*IR 8.3ms 8.3ms n=10pcs 1cyc 6 6 10 4 4 5 2 2 AVE:9.3ns 0 0 0 1 10 100 1 10 100 TIME:t(ms) trr DISPERSION MAP NUMBER OF CYCLES IFSM-t CHARACTERISTICS IFSM-CYCLE CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B Not Recommended for New Designs FORWARD VOLTAGE:VF(mV) REVERSE RECOVERY TIME:trr(ns) CAPACITANCE BETWEEN FORWARD CURRENT:IF(mA) TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN PEAK SURGE REVERSE CURRENT:IR(uA) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) PEAK SURGE PEAK SURGE CAPACITANCE BETWEEN REVERSE CURRENT:IR(uA) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF)