RB531S-30TE61 ROHM

Data Sheet Schottky Barrier Diode RB531S-30 Applications Dimensions(Unit : mm) Land size figure(Unit : mm) General rectification 0.80.05 0.120.05 0.8 Features 1)Ultra small mold type.(EMD2) 2)Low V F 3)High reliability N EMD2 Construction Silicon epitaxial planer Structure 0.30.05 0.60.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.20.05 1.50.05 2.00.05 4.00.1 1.55 0.05 0.2 0.5 0.950.06 4.00.1 2.00.05 0.90 0.05 Empty pocket 0.760.05 0.750.05 0 Absolute maximum ratings(Ta=25C) Parameter Limits Symbol Unit Reverse voltage(DC) 30 V V R Average rectified forward current Io 100 mA Forward current surge peak(60Hz/1cyc) I 500 mA FSM Junction temperature Tj 125 C Storage temperature -40to+125 Tstg C Electical voltage(Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.35 V I =10mA F F Reverse current I -- 10 A V =10V R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.B 1/3 Last Time Buy 2.2.40450.0.051 1.25 0.06 1.30.06 00 1.20.05 1.60.1 0.6 0.6 3.50.05 1.750.1 8.00.15 1.25 0.06 1.260.05 0 0 1.7 RB531S-30 Data Sheet Electrical characteristics curves 100 1000 10000 f=1MH Ta=125 C Ta=125 C 100 1000 Ta=75 C Ta=75 C 10 100 Ta=-25 C Ta=25 C 1 10 10 Ta=25 C 0.1 1 Ta=-25 C 0.01 0.1 0.001 0.01 1 0 100 200 300 400 500 600 0 102030 0 5 10 15 20 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) R F R V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F V -I CHARACTERISTICS R R R 20 300 30 Ta=25 C 19 Ta=25 C Ta=25 C V =10V V =10mA 25 R f=1MHz F 18 290 n=30pcs V =0V n=30pcs R 17 n=10pcs 20 16 280 AVE : 17.34pF 15 15 14 270 10 13 AVE : 270.2mV AVE : 2.037 A 12 260 5 11 0 10 250 Ct DISPERSION MAP V DISPERSION MAP F I DISPERSION MAP R 10 20 10 Ifsm 1cyc Ifsm Ifsm 15 t 8.3ms 8.3ms 8.3ms 1cyc 10 5 5 AVE : 3.90A 5 0 0 0 1 10 100 1 10 100 NUMBER OF CYCLES TIME : t(ms) I DISRESION MAP FSM I -CYCLE CHARACTERISTICS I -t CHARACTERISTICS FSM FSM 0.1 0.1 1000 Rth(j-a) 0.08 0.08 D=1/2 DC 0.06 0.06 Rth(j-c) Sin(=180) 100 D=1/2 0.04 Mounted on epoxy board 0.04 DC IM=10mA I =100mA F Sin(=180) 0.02 0.02 1ms time 300s 0 0 10 010 20 30 0 0.1 0.2 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED REVERSE VOLTAGE : V (V) R TIME : t(s) FORWARD CURRENT : Io(A) V -P CHARACTERISTICS R R Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.B Last Time Buy PEAK SURGE FORWARD VOLTAGE : V (mV) F TRANSIENT FORWARD CURRENT : I (A) FSM THAERMAL IMPEDANCE : Rth (C/W) FORWARD CURRENT : I (mA) F FORWARD POWER REVERSE CURRENT : I (A) R DISSIPATION : Pf(W) PEAK SURGE REVERSE CURRENT : I (A) R FORWARD CURRENT : I (A) FSM REVERSE POWER DISSIPATION : P (W) PEAK SURGE CAPACITANCE BETWEEN TERMINALS : R CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I (A) Ct(pF) FSM