RB886CST2R ROHM

Schottky Barrier Diode RB886CS Data Sheet lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm) 0 .1 6 0 .0 5 High frequency detection 0.55 0 .6 0 .0 5 lFeatures 1) Ultra small mold type. (VMN2) VMN2 4 2) Low Ct and high detection cathode efficiency. 0.156 lStructure 0 .3 7 0 .0 3 0 .3 5 0 .1 ROHM : VMN2 : dot (year week factory) + day lConstruction anode Silicon epitaxial planar type lTaping specifications (Unit : mm) 1.55 0 .2 0 .0 5 1.55 4 0 .1 2 0 .0 5 0.5 0.5 0.52 2 0 .0 5 0 .7 0 .0 5 4 .0 0 .1 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Limits Unit Reverse voltage V 15 V R I 10 Average forward rectified current mA F T 125 Junction temperature C j Storage temperature T -40 to +125 C stg lElectrical characteristics (T = 25C) a Parameter Symbol Min. Typ. Max. Unit Conditions I 1.0mA V - - 0.35 Forward voltage V F F= I V =5.0V Reverse current - - 120 mA R R V =1.0V, f=1MHz C - 0.53 0.80 Capacitance between terminals pF t R www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.B 1/3 1 .1 0 .0 5 0 .9 0 .0 5 1 .0 0 .0 5 0.45 0.45 3 .5 0 .0 5 1 .7 5 0 .1 8 .0 0 .2 0.5Data Sheet RB886CS lElectrical characteristic curves 10 1000 Ta = 125 C Ta = 75 C 1 100 Ta = -25 C Ta = 25 C Ta = 25 C 0.1 10 Ta = 75 C Ta = 125 C Ta = -25 C 0.01 1 0 300 600 900 1200 1500 0 1 2 3 4 5 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1 300 f = 1MHz Ta=25 C V =1mA F 290 n=30pcs 280 270 AVE : 275.2mV 260 0.1 250 0 1 2 3 4 5 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -C CHARACTERISTICS R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.B 2/3 CAPACITANCE BETWEEN FORWARD CURRENT : I (mA) F TERMINALS : C (pF) t FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I ( mA) F R